BUJ302A NXP Semiconductors, BUJ302A Datasheet
BUJ302A
Manufacturer Part Number
BUJ302A
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BUJ302A.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUJ302AD
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
August 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
V
I
I
P
V
t
SYMBOL
V
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
f
C
CM
B
BM
PIN
tab
stg
j
CESM
CBO
CEO
tot
CEsat
CESM
CEO
CBO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
tab
CONDITIONS
V
T
I
Ic=1A,I
CONDITIONS
V
T
CONDITIONS
in free air
C
1 2 3
mb
mb
1
BE
BE
= 1.0 A;I
= 0 V
= 0 V
25 ˚C
25 ˚C
B1
=0.2A
B
= 0.2 A
SYMBOL
b
Objective specification
TYP.
TYP.
MIN.
145
-65
70
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1000
1000
e
1000
1000
c
0.75
BUJ302A
500
160
500
150
150
1.0
2.5
50
50
2
3
2
3
1
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
V
A
A
V
V
V
V
A
A
A
A
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BUJ302A Summary of contents
Page 1
... Junction to ambient th j-a August 1998 CONDITIONS ˚ 1.0 A Ic=1A,I =0.2A B1 PIN CONFIGURATION tab CONDITIONS ˚C mb CONDITIONS in free air 1 Objective specification BUJ302A TYP. MAX. UNIT - 1000 V - 1000 V - 500 1.0 V 145 160 ns SYMBOL MIN ...
Page 2
... CONDITIONS Con Bon Boff ohms BB2 Con Bon - 1 0 Con Bon - 100 ˚ Objective specification BUJ302A MIN. TYP. MAX. UNIT - - 0 1 500 - - 1 1 TYP ...
Page 3
... Dimensions in mm Net Mass 3,0 max not tinned 1,3 max (2x) Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 1998 10,3 max 1,3 3,7 2,8 3,0 13,5 min 0,9 max (3x) 2,54 2,54 Fig.1. TO220AB; pin 2 connected to mounting base. 3 Objective specification BUJ302A 4,5 max 5,9 min 15,8 max 0,6 2,4 Rev 1.000 ...
Page 4
... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1998 Objective specification 4 BUJ302A Rev 1.000 ...