VND5025BK-E STMicroelectronics, VND5025BK-E Datasheet - Page 8

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VND5025BK-E

Manufacturer Part Number
VND5025BK-E
Description
Double Channel High Side Driver With Analog Current Sense For Automotive Applications
Manufacturer
STMicroelectronics
Datasheet
Electrical characteristics
8/31
Table 5.
1. For each channel
2. PowerMOS leakage included
Table 6.
V
Symbol
(dV
(dV
V
USDhyst
V
I
R
V
L(off)
Symbol
clamp
V
USD
I
CC
ON
OUT
OUT
W
S
t
t
W
F
d(on)
d(off)
OFF
ON
/dt)
/dt)
Operating supply
voltage
Undervoltage shutdown
Undervoltage shut-
down hysteresis
On state resistance
Clamp voltage
Supply current
Off state output
current
Output - V
voltage
on
off
Power section (8V < V
specified)
Switching (V
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
Turn-off voltage slope
Switching energy losses
during t
Switching energy losses
during t
Parameter
(1)
(1)
CC
W
W
Parameter
diode
ON
OFF
CC
(1)
= 13V; T
I
I
I
I
Off State; V
V
On State; V
I
V
V
-I
OUT
OUT
OUT
S
OUT
OUT
IN
IN
IN
= 20 mA
CC
= V
= V
= V
= 3A; T
= 3A; T
= 3A; V
= 0A
j
= 4A; T
= 25°C)
< 36V; -40°C < T
OUT
OUT
OUT
R
(see
R
R
(see
Test conditions
L
L
L
CC
CC
Test conditions
= V
= 0V; V
= 0V; V
= 4.3Ω
= 4.3Ω
= 4.3Ω
j
j
CC
j
= 25°C
= 150°C
Figure
Figure
= 150°C
= 13V; T
= 13V; V
SENSE
= 5V; T
CC
CC
8)
8)
= V
= 13V; T
= 13V; T
j
j
IN
= 25°C
= 25°C;
CSD
j
= 5V;
< 150°C, unless otherwise
Min
= 0V
j
j
= 25°C
= 125°C
(see
(see
Figure
Figure
0.45
0.35
Typ
35
50
Min Typ Max Unit
4.5
41
0
0
21)
22)
0.01
VND5025BK-E
2
3.5
0.5
13
46
3
(2)
Max
5
4.5
0.7
36
25
50
35
52
6
3
5
(2)
Unit
V/µs
mΩ
mJ
mA
µA
µA
µs
V
V
V

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