VTB8441B PerkinElmer, VTB8441B Datasheet

VTB8441B

Manufacturer Part Number

VTB8441B

Description

Vtb Process Photodiodes

Manufacturer

PerkinElmer

Datasheet

1.VTB8441B.pdf (1 pages)

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PRODUCT DESCRIPTION

Planar silicon photodiode in recessed ceramic

package. The package incorporates an infrared

rejection filter. These diodes have very high

shunt resistance and have good blue response.

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C

SYMBOL

VTB Process Photodiodes

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

TC V

TC R

TC I

NEP

range

1/2

Short Circuit Current

Open Circuit Voltage

Dark Current

Shunt Resistance

Junction Capacitance

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

Temperature Coefficient

CHARACTERISTIC

H = 100 fc, 2850 K

2850 K

H = 100 fc, 2850 K

2850 K

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

TEST CONDITIONS

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

Operating Temperature:

Min.

330

(See also VTB curves, pages 21-22)

2.2 x 10

1.1 x 10

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

VTB8440B

Typ.

420

-2.0

-8.0

580

±50

CHIP ACTIVE AREA: .008 in

.02

.07

1.0

-13

(Typ.)

CASE 21F

VTB8440B, 8441B

2000

Max.

720

.08

inch (mm)

Min.

8 mm CERAMIC

330

2.4 x 10

9.7 x 10

VTB8441B

-20°C to 75°C

Typ.

420

-2.0

-8.0

580

±50

.02

1.4

1.0

(5.16 mm

-14

(Typ.)

Max.

100

720

.08

)

cm Hz

Degrees

UNITS

mV/°C

%/°C

µA

/ W

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