VTB8341 PerkinElmer, VTB8341 Datasheet

VTB8341

Manufacturer Part Number

VTB8341

Description

Vtb Process Photodiodes

Manufacturer

PerkinElmer

Datasheet

1.VTB8341.pdf (1 pages)

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PRODUCT DESCRIPTION

Planar silicon photodiode mounted on a two

lead ceramic substrate and coated with a thick

layer of clear epoxy. These diodes have very

high shunt resistance and have good blue

response.

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C

SYMBOL

VTB Process Photodiodes

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

TC V

TC R

TC I

NEP

range

1/2

Short Circuit Current

Open Circuit Voltage

Dark Current

Shunt Resistance

Junction Capacitance

Sensitivity

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

Temperature Coefficient

CHARACTERISTIC

H = 100 fc, 2850 K

2850 K

H = 100 fc, 2850 K

2850 K

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

365 nm

TEST CONDITIONS

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

Operating Temperature:

(See also VTB curves, pages 21-22)

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

Min.

320

CHIP ACTIVE AREA: .008 in

9.7 x 10

2.4 x 10

CASE 11 CERAMIC

VTB8341

inch (mm)

Typ.

490

-2.0

-8.0

920

±60

.12

1.4

1.0

.10

-14

(Typ.)

VTB8341

-20°C to 75°C

(5.16 mm

Max.

1100

100

.23

)

cm Hz

Degrees

UNITS

mV/°C

%/°C

A/W

µA

/ W

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