VTB9412 PerkinElmer, VTB9412 Datasheet

VTB9412

Manufacturer Part Number

VTB9412

Description

Vtb Process Photodiodes

Manufacturer

PerkinElmer

Datasheet

1.VTB9412.pdf (1 pages)

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PRODUCT DESCRIPTION

Small area planar silicon photodiode in a

recessed ceramic package. The chip is coated

with a protective layer of clear epoxy. These

diodes have very high shunt resistance and

have good blue response.

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

SYMBOL

VTB Process Photodiodes

TC V

TC R

TC I

NEP

range

1/2

Short Circuit Current

Open Circuit Voltage

Dark Current

Shunt Resistance

Junction Capacitance

Sensitivity

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

Temperature Coefficient

CHARACTERISTIC

2850 K

H = 100 fc, 2850 K

365 nm

H = 100 fc, 2850 K

2850 K

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

TEST CONDITIONS

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

Operating Temperature:

Min.

320

(See also VTB curves, pages 21-22)

4.2 x 10

3.0 x 10

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

VTB9412

Typ.

490

-2.0

-8.0

920

±50

CHIP ACTIVE AREA: .0025 in

.12

.25

.31

.09

-14

(Typ.)

CASE 20 6 mm CERAMIC

Max.

1100

100

.23

inch (mm)

VTB9412, 9413

Min.

320

5.9 x 10

2.1 x 10

VTB9413

Typ.

-2.0

-8.0

±50

-20°C to 75°C

490

920

.12

7.0

.31

.09

-15

(1.60 mm

(Typ.)

Max.

1100

.23

)

cm Hz

Degrees

UNITS

mV/°C

%/°C

A/W

µA

/ W

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