VTB5051UV PerkinElmer Optoelectronics, VTB5051UV Datasheet

VTB5051UV

Manufacturer Part Number

VTB5051UV

Description

VTB Process Photodiodes

Manufacturer

PerkinElmer Optoelectronics

Datasheet

1.VTB5051UV.pdf (1 pages)

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PRODUCT DESCRIPTION

Planar silicon photodiode in a dual lead TO-5

package with a UV transmitting “flat” window.

Chip is common to the case. These diodes have

very high shunt resistance and have good blue

response.

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C

SYMBOL

VTB Process Photodiodes

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

TC V

TC R

TC I

NEP

range

1/2

Short Circuit Current

Open Circuit Voltage

Dark Current

Shunt Resistance

Junction Capacitance

Sensitivity

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

Temperature Coefficient

CHARACTERISTIC

H = 100 fc, 2850 K

2850 K

H = 100 fc, 2850 K

2850 K

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

365 nm

220 nm

TEST CONDITIONS

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

Operating Temperature:

(See also VTB curves, pages 21-22)

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

Min.

.038

200

CHIP ACTIVE AREA: .023 in

CASE 14 TO-5 HERMETIC

2.1 x 10

1.8 x 10

VTB5051UV

inch (mm)

Typ.

130

490

-2.0

-8.0

920

±50

3.0

0.1

.12

.56

-14

VTB5051UV

(Typ.)

-40°C to 110°C

(14.8 mm

1100

Max.

250

.23

)

cm Hz

Degrees

UNITS

mV/°C

%/°C

A/W

µA

/ W

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