NP109N055PUJ

Manufacturer Part NumberNP109N055PUJ
DescriptionSwitching N-channel Power Mos Fet
ManufacturerRenesas Electronics Corporation.
NP109N055PUJ datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (204Kb)Embed
Next
DESCRIPTION
The NP109N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Note
NP109N055PUJ-E1B-AY
Pure Sn (Tin)
Note
NP109N055PUJ-E2B-AY
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
• Super low on-state resistance
R
= 3.2 mΩ MAX. (V
= 10 V, I
DS(on)
GS
• Low input capacitance
C
= 6900 pF TYP.
iss
• Designed for automotive application and AEC-Q101 qualified
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
= 0 V)
GS
Gate to Source Voltage (V
= 0 V)
DS
Drain Current (DC) (T
= 25°C)
C
Note1
Drain Current (pulse)
Total Power Dissipation (T
= 25°C)
C
Total Power Dissipation (T
= 25°C)
A
Channel Temperature
Storage Temperature
Note2
Single Avalanche Energy
Note3
Repetitive Avalanche Current
Note3
Repetitive Avalanche Energy
μ
Notes 1. PW ≤ 10
s, Duty Cycle ≤ 1%
2. Starting T
= 25°C, V
= 28 V, R
ch
DD
= 25 Ω
3. T
≤ 150°C, R
ch
G
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19729EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP109N055PUJ
SWITCHING
N-CHANNEL POWER MOS FET
PACKING
Tape 1000 p/reel
= 55 A)
D
= 25°C)
A
V
55
V
DSS
±20
V
V
GSS
±110
I
A
D(DC)
I
±440
A
D(pulse)
P
220
W
T1
P
1.8
W
T2
°C
T
175
ch
T
−55 to +175
°C
stg
E
291
mJ
AS
I
54
A
AR
E
291
mJ
AR
= 25 Ω, V
= 20 → 0 V, L = 100
G
GS
°C/W
R
0.68
th(ch-C)
°C/W
R
83.3
th(ch-A)
PACKAGE
TO-263 (MP-25ZP) typ. 1.5 g
(TO-263)
μ
H
2009

NP109N055PUJ Summary of contents

  • Page 1

    ... DESCRIPTION The NP109N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING Note NP109N055PUJ-E1B-AY Pure Sn (Tin) Note NP109N055PUJ-E2B-AY Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance R = 3.2 mΩ ...

  • Page 2

    ... I = 110 μ di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ μ ≤ Duty Cycle 1% Data Sheet D19729EJ1V0DS NP109N055PUJ MIN. TYP. MAX. UNIT μ ±100 nA 2.0 3.0 4 101 S 2.5 3.2 mΩ 6900 10350 pF 760 1140 pF 290 ...

  • Page 3

    ... TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH R th(ch-A) R th(ch- 100 Pulse Width - s Data Sheet D19729EJ1V0DS NP109N055PUJ TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 125 150 175 T - Case Temperature - ° 83.3°C/W = 0.68°C/W Single Pulse 100 1000 3 ...

  • Page 4

    ... 150 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 0 Data Sheet D19729EJ1V0DS NP109N055PUJ = −55°C 25°C 85°C 150°C 175° Pulsed Gate to Source Voltage - V GS 25°C 85°C 150°C 175° ...

  • Page 5

    ... Q - Gate Charge - nC G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 di/dt = 100 A/μ 1.5 0 Diode Forward Current - A F Data Sheet D19729EJ1V0DS NP109N055PUJ C iss C oss C rss 1 10 100 110 100 120 ...

  • Page 6

    ... Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 1.3 ±0.2 0.025 to 0.25 Data Sheet D19729EJ1V0DS NP109N055PUJ ...

  • Page 7

    ... MARKING INFORMATION 109N055 UJ RECOMMENDED SOLDERING CONDITIONS The NP109N055PUJ should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Maximum temperature (Package's surface temperature): 260 ° ...

  • Page 8

    ... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP109N055PUJ Not all M8E 02. 11-1 ...