NP109N055PUJ Renesas Electronics Corporation., NP109N055PUJ Datasheet - Page 2

• Manufacturer Part Number: NP109N055PUJ
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
= 20
PG.
→
0 V
CHARACTERISTICS
PG.
I
G
V
= 2 mA
50
DD
R
Ω
D.U.T.
G
I
D
= 25
50
I
AS
D.U.T.
Ω
Ω
Note
Note
BV
DSS
Starting T
R
V
Note
DD
V
L
DS
L
V
DD
I
I
V
| y
R
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
ch
SYMBOL
DSS
GSS
d(on)
r
d(off)
f
rr
GS(th)
F(S-D)
DS(on)
iss
oss
rss
G
GS
GD
rr
fs
|
A
= 25°C)
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
V
0
Data Sheet D19729EJ1V0DS
D
F
F
DS
GS
DS
DS
GS
DS
GS
DD
GS
DD
GS
GS
G
τ = 1 s
Duty Cycle
= 110 A
= 110 A, V
= 110 A, V
= 0 Ω
= 55 V, V
= V
= 5 V, I
= 25 V,
= ±20 V, V
= 10 V, I
= 0 V,
= 28 V, I
= 10 V,
= 44 V,
= 10 V,
TEST CIRCUIT 2 SWITCHING TIME
PG.
μ
GS
τ
, I
TEST CONDITIONS
D
D
D
D
GS
GS
≤
= 55 A
= 250
μ
GS
= 55 A
= 55 A,
1%
s
DS
= 0 V
= 0 V,
= 0 V
R
= 0 V
G
D.U.T.
μ
A
R
V
L
DD
V
Wave Form
V
Wave Form
GS
DS
MIN.
2.0
45
V
V
V
GS
DS
0
0
DS
TYP.
6900 10350
10%
t
101
760
290
115
115
3.0
2.5
0.9
d(on)
40
20
90
10
26
38
57
90%
NP109N055PUJ
t
on
10% 10%
t
MAX.
±100
1140
r
530
180
180
4.0
3.2
1.5
90
50
30
1
V
GS
t
d(off)
UNIT
t
mΩ
off
μ
nA
pF
pF
pF
nC
nC
nC
nC
90%
ns
ns
ns
ns
ns
V
S
V
A
90%
t
f