APTGF90VDA60T3G Microsemi Corporation, APTGF90VDA60T3G Datasheet - Page 2

• Manufacturer Part Number: APTGF90VDA60T3G
• Description: Dual Boost Chopper Npt Igbt Power Module
• Manufacturer: Microsemi Corporation

Electrical Characteristics
Dynamic Characteristics
Chopper diode ratings and characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
V
V
V
T
T
T
T
I
I
C
C
E
I
CE(sat)
Q
E
GE(th)
V
Q
CES
GES
T
d(off)
T
T
d(off)
T
I
d(on)
d(on)
RRM
t
RM
I
off
sc
rr
ies
res
on
F
G
f
f
F
rr
r
r
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Short Circuit data
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
All ratings @ T
www.microsemi.com
j
= 25°C unless otherwise specified
V
R
Test Conditions
V
I
I
I
I
V
di/dt =200A/µs
Test Conditions
V
I
V
V
Test Conditions
V
f = 1MHz
V
I
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
V
V
I
V
t
p
C
C
C
C
C
F
F
F
F
G
GE
G
G
R
R
GE
GE
GE
GE
GE
GE
Bus
GE
Bus
GE
Bus
GE
≤ 10µs ; T
=100A
= 100A
= 100A
= 100A
= 100A
= 200A
= 100A
= 100A
= 100A
=600V
= 2.2Ω
= 400V
= 2.2Ω
= 2.2Ω
= 15V ; V
= 0V, V
=15V
= V
= 20V, V
= 0V ; V
= ±15V
= ±15V
= ±15V
≤15V ; V
= 300V
= 300V
= 300V
CE
, I
j
CE
= 125°C
CE
C
APTGF90VDA60T3G
CE
CE
Bus
= 600V
= 1.5mA
= 25V
=300V
= 0V
= 360V
T
T
T
T
T
T
T
T
T
T
T
Tc = 80°C
j
j
j
j
j
j
j
j
j
j
j
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 125°C
Min
Min
Min
600
4.5
1530
Typ
100
160
220
290
Typ
Typ
240
130
150
450
1.6
1.3
2.2
5.5
4.3
0.4
25
10
20
25
11
30
2
2
1
3
Max
Max
Max
100
500
250
400
2.5
6.5
2
Unit
Unit
Unit
µA
µA
nA
nC
nC
mJ
nF
ns
ns
ns
V
V
A
V
A
V
2 - 5