APTGF90VDA60T3G Microsemi Corporation, APTGF90VDA60T3G Datasheet - Page 3

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APTGF90VDA60T3G

Manufacturer Part Number
APTGF90VDA60T3G
Description
Dual Boost Chopper Npt Igbt Power Module
Manufacturer
Microsemi Corporation
Datasheet
Temperature sensor NTC
Symbol
∆R
Symbol Characteristic
Torque
SP3 Package outline
Thermal and package characteristics
V
R
T
∆B/B
B
Wt
T
T
R
ISOL
STG
thJC
25
25/85
C
J
25
/R
25
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Characteristic
Resistance @ 25°C
T
25
= 298.15 K
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
28
1
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).
B
25
/
85
R
⎜ ⎜
25
T
1
25
T
1
www.microsemi.com
⎟ ⎟
T: Thermistor temperature
R
T
: Thermistor value at T
To heatsink
17
12
Chopper Diode
APTGF90VDA60T3G
T
C
IGBT
=100°C
M4
4000
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
5
4
Max
Max
0.55
150
125
100
110
0.3
4.7
°C/W
Unit
Unit
N.m
°C
%
K
%
V
g
3 - 5

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