APTGF90VDA60T3G Microsemi Corporation, APTGF90VDA60T3G Datasheet - Page 5

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APTGF90VDA60T3G

Manufacturer Part Number
APTGF90VDA60T3G
Description
Dual Boost Chopper Npt Igbt Power Module
Manufacturer
Microsemi Corporation
Datasheet
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
250
200
150
100
0
50
0
Operating Frequency vs Collector Current
0
0.9
0.05
0.7
0.5
0.1
0.3
switching
hard
25
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.0001
50
ZVS
I
C
(A)
75
ZCS
100
V
D=50%
R
T
T
CE
J
C
G
=125°C
=75°C
=2.2Ω
0.001
=300V
rectangular Pulse Duration (Seconds)
125
www.microsemi.com
Single Pulse
150
Diode
0.01
APTGF90VDA60T3G
200
150
100
50
0
0
0.1
Forward Characteristic of diode
0.3
0.6
0.9
T
V
J
F
=125°C
(V)
1
1.2
1.5
T
J
=25°C
1.8
10
2.1
5 - 5

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