APTGF90VDA60T3G Microsemi Corporation, APTGF90VDA60T3G Datasheet - Page 4

• Manufacturer Part Number: APTGF90VDA60T3G
• Description: Dual Boost Chopper Npt Igbt Power Module
• Manufacturer: Microsemi Corporation

Typical IGBT Performance Curve
200
160
120
200
175
150
125
100
3.5
2.5
1.5
0.5
0.35
0.25
0.15
0.05
80
40
Switching Energy Losses vs Gate Resistance
75
50
25
0.3
0.2
0.1
0
0
3
2
1
0
0.00001
0
0
5
0
Output Characteristics (V
0.3
0.5
0.5
0.9
0.7
0.1
6
0.05
Transfert Characteristics
2
Gate Resistance (ohms)
Eon
1
7
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
T
J
0.0001
=125°C
1.5
4
V
8
V
V
I
CE
C
GE
CE
= 100A ; T
T
(V)
J
= 300V ; V
(V)
=25°C
2
T
9
J
6
=25°C
Eoff
2.5
10
J
GE
= 125°C
GE
T
=15V)
J
8
=15V
=125°C
0.001
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rectangular Pulse Duration (Seconds)
11
3
3.5
Single Pulse
10
12
0.01
APTGF90VDA60T3G
250
200
150
100
5
4
3
2
1
0
50
200
175
150
125
100
0
75
50
25
0
0
0
V
V
R
T
0
CE
GE
J
G
V
T
R
T
Energy losses vs Collector Current
= 125°C
25
= 2.2 Ω
J
GE
G
J
= 300V
= 15V
=125°C
0.1
Reverse Safe Operating Area
=2.2 Ω
= 125°C
=15V
100
50
1
Output Characteristics
V
200
GE
75
=20V
I
2
C
V
100 125 150 175 200
(A)
300
CE
V
Eoff
CE
(V)
1
(V)
3
400
V
GE
=15V
IGBT
Eon
V
V
GE
500
GE
4
=9V
=12V
10
600
5
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