SPB80N03S2-03SMD Infineon Technologies Corporation, SPB80N03S2-03SMD Datasheet
SPB80N03S2-03SMD
Related parts for SPB80N03S2-03SMD
SPB80N03S2-03SMD Summary of contents
Page 1
... Preliminary data Product Summary P-TO263-3-2 Ordering Code Symbol puls E AS dv/dt =175°C jmax tot stg Page 1 SPP80N03S2-03 SPB80N03S2- 3.1 max. SMD version DS(on P-TO220-3-1 Marking 2N0303 2N0303 Value 80 80 320 810 6 ±20 300 -55... +175 55/175/56 2001-04- ...
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... Diagrams are related to straight lead versions Preliminary data Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = V V GS(th DSS I GSS 3) R DS(on) = 0.5 K/W the chip is able to carry I thJC Page 2 SPP80N03S2-03 SPB80N03S2-03 Values Unit min. typ. max 0.5 K Values Unit min. typ. max 2.1 ...
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... =25° =0V, I =80A =15V /dt=100A/µ Page 3 SPP80N03S2-03 SPB80N03S2-03 Values min. typ. max. 66 132 - , - 5160 6450 pF - 2400 3000 - 410 615 - 325 490 - 90 140 - 110 160 - 25 30 ...
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... K 16.0µ 100 µ Page 4 SPP80N03S2-03 SPB80N03S2- SPP80N03S2- 100 120 140 160 ) SPP80N03S2-03 single pulse - 2001-04-05 °C ...
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... Typ. forward transconductance = f(I g DS(on)max fs parameter Page 5 SPP80N03S2-03 SPB80N03S2- SPP80N03S2- [ 4.4 4.6 4.8 5.0 5.2 5.4 10 100 ) ...
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... Forward character. of reverse diode parameter iss C oss 10 C rss Page 6 SPP80N03S2-03 SPB80N03S2- 1.25 mA 250 µ -60 - 100 ) µ SPP80N03S2- °C typ ...
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... Preliminary data 14 Typ. gate charge = parameter 125 145 °C 185 T j 100 140 °C 200 T j Page 7 SPP80N03S2-03 SPB80N03S2-03 ) Gate = 80 A pulsed D SPP80N03S2- 0,2 DS max 10 0 100 120 DS max 140 170 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Preliminary data Page 8 SPP80N03S2-03 SPB80N03S2-03 2001-04-05 ...