CM1800 Mitsubishi Electronics America, Inc., CM1800 Datasheet - Page 3

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CM1800

Manufacturer Part Number
CM1800
Description
HIGH Power Switching USE Insulated TYPE
Manufacturer
Mitsubishi Electronics America, Inc.
Datasheet

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4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
MECHANICAL CHARACTERISTICS
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
R
R
R
M
CTI
d
d
L
R
Symbol
Symbol
a
s
C-E(int)
C-E(int)
th(j-c)Q
th(j-c)R
th(c-f)
Thermal resistance
Contact thermal resistance
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Item
Item
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin,
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
T
C
= 25 C
grease
= 1W/m·K
Conditions
Conditions
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
19.5
32.0
Min
Min
600
7.0
3.0
1.0
CM1800HC-34N
Limits
Limits
11.0
0.14
Typ
Typ
0.8
16
INSULATED TYPE
Max
12.5
28.0
Max
20.0
6.0
3.0
Jul. 2005
K/kW
K/kW
K/kW
Unit
Unit
N·m
mm
mm
m
nH
kg

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