CM1800 Mitsubishi Electronics America, Inc., CM1800 Datasheet - Page 4

• Manufacturer Part Number: CM1800
• Description: HIGH Power Switching USE Insulated TYPE
• Manufacturer: Mitsubishi Electronics America, Inc.

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
3600
3000
2400
1800
1200
600
0
5
4
3
2
1
0
0
0
T
V
j
GE
= 125 C
COLLECTOR-EMITTER SATURATION
COLLECTOR-EMITTER VOLTAGE ( V )
= 15V
600
1
VOLTAGE CHARACTERISTICS
V
OUTPUT CHARACTERISTICS
GE
COLLECTOR CURRENT ( A )
= 20V
1200
2
( TYPICAL )
( TYPICAL )
1800
3
2400
4
V
V
GE
GE
T
T
V
V
j
j
3000
GE
GE
= 25 C
= 125 C
= 15V
= 12V
5
= 10V
= 8V
3600
6
3600
3000
2400
1800
1200
600
0
5
4
3
2
1
0
0
0
V
CE
= 20V
600
TRANSFER CHARACTERISTICS
T
T
FORWARD CHARACTERISTICS
2
GATE-EMITTER VOLTAGE ( V )
j
j
= 25 C
= 125 C
EMITTER CURRENT ( A )
FREE-WHEEL DIODE
1200
MITSUBISHI HVIGBT MODULES
4
HIGH POWER SWITCHING USE
( TYPICAL )
( TYPICAL )
1800
6
CM1800HC-34N
2400
8
INSULATED TYPE
T
T
j
j
3000
= 25 C
= 125 C
10
3600
12
Jul. 2005