CM1800 Mitsubishi Electronics America, Inc., CM1800 Datasheet - Page 5

• Manufacturer Part Number: CM1800
• Description: HIGH Power Switching USE Insulated TYPE
• Manufacturer: Mitsubishi Electronics America, Inc.

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
2000
1600
1200
800
400
10
10
10
10
10
0
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
0
-1
SWITCHING ENERGY CHARACTERISTICS
V
f = 100kHz
V
R
T
j
GE
CC
G(on)
= 125 C, Inductive load
2 3
COLLECTOR-EMITTER VOLTAGE ( V )
CAPACITANCE CHARACTERISTICS
600
= 0V, T
= 850V, V
= 0.9 , R
COLLECTOR CURRENT ( A )
5 7
1200
j
10
= 25 C
HALF-BRIDGE
GE
0
G(off)
( TYPICAL )
( TYPICAL )
= 15V
2 3
1800
= 2.2
5 7
E
2400
off
10
1
E
on
2 3
3000
C
C
C
oes
ies
res
E
5 7
rec
3600
10
2
3000
2500
2000
1500
1000
500
20
16
12
8
4
0
0
0
0
SWITCHING ENERGY CHARACTERISTICS
V
T
V
V
T
j
CC
CC
GE
j
= 25 C
= 125 C, Inductive load
GATE CHARGE CHARACTERISTICS
= 850V, I
2
= 850V, I
= 15V
2
GATE RESISTANCE ( )
4
GATE CHARGE ( C )
MITSUBISHI HVIGBT MODULES
C
C
4
HIGH POWER SWITCHING USE
HALF-BRIDGE
= 1800A
= 1800A,
( TYPICAL )
( TYPICAL )
6
6
CM1800HC-34N
8
8
10
INSULATED TYPE
E
on
10
12
E
E
rec
off
14
12
Jul. 2005