S1M1W043 Epson Electronics America, Inc., S1M1W043 Datasheet

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S1M1W043

Manufacturer Part Number
S1M1W043
Description
Full CMOS Asynchronous SRAM
Manufacturer
Epson Electronics America, Inc.
Datasheet
Rev.1.0
The S1M1W043B0J7 is a 262,144 words x 16-bit asynchronous, random access memory on a monolithic CMOS
chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with
back-up batteries. The asynchronous and static nature of the memory requires no external clock and no refreshing
circuit. It is possible to control the data width by the data byte control. 3-state output allows easy expansion of
memory capacity. The temperature range of the S1M1W043B0J7 is from –40 to 85 C, and it is suitable for the
industrial products.
DESCRIPTION
FEATURES
BLOCK DIAGRAM
Low supply current ..................... LL Version
Completely static ........................ No clock required
Supply voltage ............................ 1.65V to 2.2V
3-state output with wired-OR capability
Non-volatile storage with back-up batteries
Package ..................................... S1M1W043B0J
Fast Access time ........................ 70ns (1.65V)
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
CS1
CS2
OE
WE
LB
UB
Super Low Voltage Operation and Low Current Consumption
Access Time 70ns (1.65V)
262,144 Words x 16-bit Asynchronous
Wide Temperature Range
10
I/O1
8
1024
256
S1M1W043B0J7
I/O Buffer
PFBGA-48 pin (Plastic CSP)
Memory Cell Array
1024 x 256x 16
Column Gate
4M-bit Static RAM
256x 16
16
I/O16
PF1195-01
1

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S1M1W043 Summary of contents

Page 1

... The asynchronous and static nature of the memory requires no external clock and no refreshing circuit possible to control the data width by the data byte control. 3-state output allows easy expansion of memory capacity. The temperature range of the S1M1W043B0J7 is from – and it is suitable for the industrial products. ...

Page 2

... S1M1W043B0J7 PIN CONFIGURATION TFBGA-48 pin I/ I/O10 I/O11 C V I/O12 I/O13 E DD I/O15 I/O14 F I/O16 Top view (Looking through part) PIN DESCRIPTION A0 to A17 Address Input WE Write Enable OE Output Enable CS1 Chip Select1 CS2 Chip Select2 ...

Page 3

... DDA1 I = 0mA cyc I DDO I = 0mA I/O = 1.8V DD Conditions ADD ADD I/O I/O S1M1W043B0J7 + 0 0.3 DD 0.5 (Ta = – 1.65 to 2.2V Typ. Max. 1.8/2.0 2.2 0.0 0.0 – V +0.3 DD – 0.3 (V =0V – 1. Min. Typ. Max. –1.0 – 1.0 –1.0 – ...

Page 4

... Ta = – S1M1W043B0J7 Unit 1.65 to 2.2V Max. – ns – ns – ns – ns – ns – ns – ns – ns – ns – – ns (1.65V to 2.2V) DD (1.65V to 2.2V 5pF (Includes Jig Capacitance) ...

Page 5

... I/ (Dout (Din CS2, output buffer "Hi-Z" state even if O Conditions V = 1.2V DDR CS1 = CS2 V – 0.2V or CS2 0.2V DD S1M1W043B0J7 * CW1 t CW2 High CW1 ...

Page 6

... S1M1W043B0J7 Data retention timing (CS1 Control 1.65V V 1.0V DDR t Data hold time CDR CS1 V – 0.2V DD CS1 0.8xV FUNCTIONS Truth Table CS1 CS2 ...

Page 7

... LB and "High", CS2 = "Low" 0.2V, there is almost no current flow except through the high resistance parts S1M1W043B0J7 ="Low",CS2 = "High" and ...

Page 8

... S1M1W043B0J7 PACKAGE DIMENSIONS PFBGA-48 pin A Index Base Tape Side View Bottom View 1.125Typ. 8 Top View 7.0 0 SRAM Die 0.75Typ. 0.375Typ. Unit : mm Rev.1.0 ...

Page 9

... Phone: 042–587–5812 FAX: 042–587–5564 ED International Marketing Department Asia 421-8 Hino, Hino-shi, Tokyo 191-8501, JAPAN Phone: 042–587–5814 FAX: 042–587–5110 S1M1W043B0J7 EPSON Electronic Devices Website http://www.epson.co.jp/device/ First issue March, 2001 Printed in Japan H Rev.1.0 ...

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