BFR180 Infineon Technologies Corporation, BFR180 Datasheet - Page 6

• Manufacturer Part Number: BFR180
• Description: NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies Corporation

Collector-base capacitance C
f = 1MHz
Power Gain G
f = 0.9GHz
V
CE
0.45
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
pF
dB
= Parameter
18
14
12
10
8
6
4
0
0
1
2
ma
, G
2
4
ms
10V
= f(I
3
6
C
)
4
cb
8
3V
2V
1V
0.7V
= f (V
mA
V
V
I
C
CB
CB
11
6
)
6
Transition frequency f
Power Gain G
f = 1.8GHz
V
V
CE
CE
GHz
dB
= Parameter
14
10
= Parameter
8
6
5
4
3
2
1
0
8
6
4
2
0.0
0
1.0
1
ma
, G
2
2.0
ms
= f(I
T
3
10V
3.0
= f (I
10V
C
)
4
C
Jun-27-2001
8V
)
4.0
5V
3V
2V
1V
0.7V
BFR180
mA
mA
5V
3V
2V
1V
0.7V
I
I
C
C
5.5
6