BFR949F Infineon Technologies Corporation, BFR949F Datasheet
BFR949F
Manufacturer Part Number
BFR949F
Description
Rf-bipolar NPN Type Transistors With Transition Frequency of 9 GHZ
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BFR949F.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BFR949F E6327
Manufacturer:
INFINEON
Quantity:
12 000
NPN Silicon RF Transistor
Preliminary data
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR949F
Thermal Resistance
Parameter
Junction - soldering point
1 T
2 For calculation of R
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
S
F or low noise, high-gain broadband amplifiers at
f
collector currents from 1 mA to 20 mA
F = 1 dB at 1 GHz
S is measured on the collector lead at the soldering point to the pcb
T
= 9 GHz
93°C
thJA
please refer to Application Note Thermal Resistance
1)
2)
Marking
RKs
1 = B
1
Pin Configuration
Symbol
R
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
j
A
stg
thJS
CEO
CES
CBO
EBO
tot
2 = E
3
3 = C
-65 ... 150
-65 ... 150
Value
Value
250
150
1.5
10
20
20
35
2 25
4
Package
TSFP-3
Jan-04-2002
BFR949F
1
Unit
K/W
Unit
V
mA
mW
°C
2
Related parts for BFR949F
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Antenna Switch Silicon Pin Diode
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Silicon Switching Diodes
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Single Igbt Driver Ic
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Igbt Modules
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Igbt Modules
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Igbt Modules
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
5 Volt Standard Regulator
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Active Biased Transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
N-channel Small Signal Mosfet 20v?800v
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Sipmos Small-signal Transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Complementary Mosfets 60v Small-signal-transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Complementary Mosfets 60v
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
P-channel Mosfets Power-transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Power Mosfets
Manufacturer:
Infineon Technologies Corporation
Datasheet:
BFR949F Summary of contents
Page 1
... Application Note Thermal Resistance thJA Marking Pin Configuration RKs Symbol V CEO V CES V CBO V EBO tot stg Symbol R thJS 1 BFR949F Package TSFP Value Unit 1 250 mW 150 °C -65 ... 150 -65 ... 150 Value Unit K Jan-04-2002 ...
Page 2
... Collector -base cutoff current Emitter-base cutoff current current gain mA Symbol Values min. typ (BR)CEO - - I CES - - I CBO - - I EBO 100 140 BFR949F Unit max 100 µA 100 nA 0.1 µA 200 - Jan-04-2002 ...
Page 3
... Symbol Sopt , Sopt Sopt Sopt |S 21e = BFR949F Values min. typ. max 2 Jan-04-2002 Unit GHz ...
Page 4
... CJS = 0 0.924 C’ EHA07524 Valid up to 6GHz 4 BFR949F - 1.085 1.86 ISE = - 1.095 3.68 ISC = 72.2 IRB = - 0.849 0.456 MJE = 0.198 - VTF = deg 459 CJC = 0.217 - XCJC = fF 0.75 VJS = 1. 300 TNOM 0 ...