STP2N62K3 STMicroelectronics, STP2N62K3 Datasheet - Page 8

• Manufacturer Part Number: STP2N62K3
• Manufacturer: STMicroelectronics

Electrical characteristics
8/22
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Maximum avalanche energy vs
E
V
V
AS
SD
GS(th)
0.75
1.05
1.00
0.95
0.90
0.85
0.80
(norm)
1.10
0.70
0.4
0.3
0.2
(mJ)
0.8
0.7
0.5
0.1
0.9
0.6
(V)
-75
0
60
50
40
90
70
30
20
10
80
0
0
0
vs temperature
characteristics
starting Tj
T
J
=150°C
-25
20
1
T
J
=-50°C
40
2
I
25
D
=50µA
60
3
80
V
75
I
D
DD
=2.2 A
=50 V
4
100
125
T
120 140
J
=25°C
5
Doc ID 018898 Rev 1
AM09190v1
AM09193v1
AM09180v1
I
T
SD
J
T
(°C)
(A)
J
(°C)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
R
BV
DS(on)
(norm)
(norm)
1.05
0.90
1.10
1.00
0.95
DSS
1.5
2.5
2.0
1.0
0.5
0
-75
-75
temperature
-25
-25
V
I
I
25
D
D
GS
25
=1mA
=1.1A
=10V
VDSS
75
75
STD/F/P/U2N62K3
vs temperature
125
125
T
AM09191v1
AM09192v1
T
J
(°C)
J
(°C)