CEM8401 Chino Excel Technology, CEM8401 Datasheet

no-image

CEM8401

Manufacturer Part Number
CEM8401
Description
Complementary N-p Channel SO-8 Package
Manufacturer
Chino Excel Technology
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEM8401
Manufacturer:
CET
Quantity:
20 000
5
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
CEM8401
THERMAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS (T
FEATURES
-30V , -5.0A , R
30V , 7.5A , R
Super high dense cell design for extremely low R
High power and current handing capability.
Surface Mount Package.
Gate-Source Voltage
Drain Current-Continuous
Drain-Source Diode Forward Current
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
R
Parameter
R
-Pulsed
DS(ON)
DS(ON)
DS(ON)
DS(ON)
=21m
=30m
=50m @V
=75m @V
a
@V
@V
a
GS
GS
GS
GS
=10V.
=4.5V.
=-10V.
=-4.5V.
a
SO-8
a
5-190
A
T
=25 C unless otherwise noted)
Symbol
DS(ON)
J
R
V
, T
V
I
P
DM
I
GS
I
DS
D
S
D
STG
1
JA
.
N-Channel P-Channel
7.5
2.3
30
30
20
-55 to 150
2.0
62.5
D
S
8
1
1
1
-2.3
-30
5.0
20
20
D
G
7
2
1
1
D
S
6
3
Feb. 2003
2
2
Unit
W
C
D
G
V
V
A
A
A
5
4
C
/W
2
2

Related parts for CEM8401

CEM8401 Summary of contents

Page 1

... CEM8401 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) FEATURES 5 30V , 7. =21m DS(ON) R =30m DS(ON) -30V , -5. DS(ON) R DS(ON) Super high dense cell design for extremely low R High power and current handing capability. Surface Mount Package. ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous ...

Page 2

... D(ON 3.5A 10V, GS Ω D(OFF) GEN =15V 4.7A =10V 5-191 CEM8401 C Min Typ Max Unit 30 V µ 100 mΩ mΩ 857 P 343 P 105 ...

Page 3

... CEM8401 P-Channel ELECTRICAL CHARACTERISTICS (T Parameter 5 OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time ...

Page 4

... V , Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 1200 1000 800 600 400 200 Drain-to Source Voltage (V) DS Figure 3. Capacitance CEM8401 =25 C unless otherwise noted) A Condition Symbol 0V 5.1A N- 0V, Is =-3.6A P- Tj=125 1.5 2 ...

Page 5

... CEM8401 1.30 1.20 1.10 1.00 5 0.90 0.80 0.70 0.60 -50 -25 0 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Drain-Source Current (A) DS Figure 7. Transconductance Variation with Drain Current 10 V =15V DS I =4. Qg, Total Gate Charge (nC) Figure 9. Gate Charge =250 ...

Page 6

... Crss 0. -50 -25 Figure 14. On-Resistance Variation with 1. 1.10 I =-250 A D 1.05 1.00 0.95 0.90 0.85 -50 -25 75 100 125 150 Figure 16. Breakdown Voltage Variation 5-195 CEM8401 - Tj=125 Gate-to-Source Voltage ( =-4. =-10V 100 125 150 Junction Temperature Temperature ...

Page 7

... CEM8401 P-Channel Drain-Source Current (A) DS Figure 17. Transconductance Variation with Drain Current 10 V =-15V DS I =-4. Qg, Total Gate Charge (nC) Figure 19. Gate Charge 1.15 1.10 1.05 1.00 0.95 0.90 V =-15V DS 0. Figure 18. Body Diode Forward Voltage 5-196 20 V =0V GS ...

Page 8

... Single Pulse -3 0. Square Wave Pulse Duration (sec) Square Wave Pulse Duration (sec) Figure 23. Normalized Thermal Transient Impedance Curve Figure 13. Normalized Thermal Transient Impedance Curve CEM8401 d(on) V OUT V OUT 10% 50 10% PULSE WIDTH Figure 22. Switching Waveforms ...

Related keywords