HY29F800A Hynix Semiconductor, HY29F800A Datasheet - Page 27

• Manufacturer Part Number: HY29F800A
• Description: Flash Memory
• Manufacturer: Hynix Semiconductor

AC CHARACTERISTICS
Program and Erase Operations
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, V
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes are
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most bytes
Rev. 1.1/Feb 02
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programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90 °C, V
command. See Table 5 for further information on command sequences.
programmed to 0x00 before erasure.
program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum byte
program time specified is exceeded. See Write Operation Status section for additional information.
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