BSP315 Infineon Technologies Corporation, BSP315 Datasheet

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SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • -0.8...-2.0 V GS(th) Type V DS BSP 315 -50 V Type Ordering Code BSP 315 Q67000-S75 BSP 315 Q67000-S249 Maximum Ratings Parameter Drain source ...

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Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...

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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...

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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage -2 ...

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Power dissipation tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : ...

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Typ. output characteristics parameter µ tot -2.2 I -2.0 D -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 ...

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Drain-source on-resistance (on) j parameter -1 - 2.4 2 (on) 1.8 1.6 1.4 1.2 98% 1.0 typ 0.8 0.6 0.4 0.2 0.0 -60 -20 ...

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Drain-source breakdown voltage (BR)DSS j -60 V -58 V -57 (BR)DSS -56 -55 -54 -53 -52 -51 -50 -49 -48 -47 -46 -45 -60 - Semiconductor Group Safe operating area I parameter : ...

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Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 BSP 315 Sep-12-1996 ...