BSP316 Infineon Technologies Corporation, BSP316 Datasheet
BSP316
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BSP316 Summary of contents
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SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • -0.8...-2.0 V GS(th) V Type DS BSP 316 -100 V Type Ordering Code BSP 316 Q67000-S92 Maximum Ratings Parameter Drain source voltage Drain-gate voltage ...
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Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ -0. DS(on)max, D Input capacitance MHz GS DS Output ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current = 25 ˚ Inverse diode direct current,pulsed ˚C A Inverse diode forward voltage -1 ...
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Power dissipation = ƒ tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : D ...
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Typ. output characteristics = ƒ parameter µ tot -1.3 I -1.2 D -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 ...
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Drain-source on-resistance = ƒ (on) j parameter -0. 7.0 Ω 6.0 R 5.5 DS (on) 5.0 4.5 4.0 3.5 98% 3.0 2.5 typ 2.0 1.5 1.0 0.5 0.0 -60 ...
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Drain-source breakdown voltage = ƒ (BR)DSS j -120 V -116 -114 V (BR)DSS -112 -110 -108 -106 -104 -102 -100 -98 -96 -94 -92 -90 -60 - Data Sheet Safe operating area I parameter ...