MT28F160A3 Micron Technology, MT28F160A3 Datasheet
MT28F160A3
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MT28F160A3 Summary of contents
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... Q ranges are available upon request. CC Part Number Example: MT28F160A3FD-11 TET GENERAL DESCRIPTION The MT28F160A3 is a nonvolatile, electrically block- erasable (flash), programmable, read-only memory con- taining 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160A3 is manufactured on 0.22µm process technology in a 48-ball FBGA package. The device has an I/O supply of 2 ...
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... ARCHITECTURE The MT28F160A3 flash contains eight 4K-word pa- rameter blocks and thirty-one 32K-word blocks. The first two 4K-word blocks are called boot blocks and are locked with WP# control. Memory is organized by using a blocked architecture to allow independent erasure of selected memory blocks. Any address within a block address range selects that block for the required READ, WRITE, or ERASE operation (see Figures 1 and 2) ...
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... 1F DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY TYPE Input Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is LOW, the cycle is either a WRITE to the command state machine (CSM the memory array ...
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... Operation must be preceded by WRITE SETUP command. 5. The READ ARRAY command must be issued before reading the array after writing or erasing. 6. See Table 3 for the IDENTIFY DEVICE command. DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY ...
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... NOTE: 1. The two 4K-word blocks (boot blocks) can only be locked/unlocked by WP#. DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY Figure 1 Top Boot Block Memory Address Map ...
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... NOTE: 1. The two 4K-word blocks (boot blocks) can only be locked/unlocked by WP#. DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY Figure 2 Bottom Boot Block Memory Address Map ...
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... MEMORY ORGANIZATION The MT28F160A3 memory array is segmented into 31 blocks of 32K words, along with eight 4K-word parameter blocks. The device is available with block architecture mapped in either of the two configurations: the boot blocks located at the top or at the bottom of the memory array, as required by different microprocessors. The ...
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... AD = Array data 7. SRD = Data read from status register Data to be written at location Don’t Care DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY See Table 3 for the CSM command definitions and data for each of the bus cycles ...
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... The WSM successfully initiates an ERASE or PRO- GRAM operation only when V age range. For data protection required that RP# be held at a logic LOW level during a CPU reset. DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY CLEAR STATUS REGISTER The WSM can set to “ ...
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... A proper block address must be provided in an ERASE operation. If that addressed block is protected, then the SR1 bit is set (SR1 = 1) when WP DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY ...
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... DATA PROTECTION PROVIDED All blocks locked All blocks locked All blocks unlocked Boot blocks locked DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY ERASE OPERATIONS in an array block to “1s.” After BLOCK ERASE CONFIRM is issued, the CSM responds only to an ERASE SUSPEND command until the WSM completes its task ...
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... If RP# goes LOW during a PROGRAM or ERASE opera- tion, the device powers down and becomes nonfunc- tional. Data being written or erased at that time becomes DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY invalid or indeterminate, requiring that the operation be performed again after power restoration ...
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... SR3 must be cleared before attempting additional PROGRAM/ERASE operations. 3. SR4 is cleared only by the CLEAR STATUS REGISTER command, but it does not prevent additional program operation attempts. DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY ...
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... SR3 must be cleared before attempting additional PROGRAM/ERASE operations. 3. SR5 is cleared only by the CLEAR STATUS REGISTER command in cases where multiple blocks are erased before full status is checked. DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY ...
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... Issue ERASE RESUME Command ERASE Continued NOTE: 1. See BLOCK ERASE Flowchart for complete erasure procedure. 2. See Word Programming Flowchart for complete programming procedure. DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY NO ...
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... YES Issue READ MEMORY Command Finished Reading ? YES Issue PROGRAM RESUME Command PROGRAM Resumed DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY BUS OPERATION COMMAND WRITE READ Standby Standby WRITE ...
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... V Q must be less than or equal allowable for production programming only, not erasing. PP DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY mum Ratings” may cause permanent damage to the de- 3 ...
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... NOTE dependent on cycle rates Automatic power savings (APS) mode reduces I DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY Q (MAX MHz; Other inputs ...
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... Input rise and fall times ................................................ <10ns Input timing reference level ....................................... V Output timing reference level .................................... V Output load ............................................................. C V 0.0V NOTE includes probe and fixture capacitance. L DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY Q CC Q/2 CC Q/2 ...
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... RP# HIGH to output valid delay RP# LOW pulse width OE# or CE# HIGH to output in High-Z Output hold time from OE#, CE# or address change NOTE: 1. OE# may be delayed by DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY Q = 2.7V–3.3V) ...
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... V IL TIMING PARAMETERS SYMBOL MIN ACE t AOE t AA DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY READ CYCLE VALID ADDRESS ACE t AOE t RWH DataSheet4U.com -9 -11 MAX ...
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... PP 5. Typical values measured Assumes no system overhead. 7. Typical write times tested with checkerboard data pattern. DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY SYMBOL ...
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... V hold time from status data valid PP WE# (CE#) HIGH to busy status (SR7 = 0) NOTE: 1. Polling status register before 800ns (MAX). DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY SYMBOL t WPH ( ...
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... NOTE: 1. Address inputs are “Don’t Care” but must be held stable 800ns (MAX). DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY WRITE/ERASE CYCLE WE#-CONTROLLED WRITE/ERASE Note 1 A ...
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... NOTE: 1. Address inputs are “Don’t Care” but must be held stable 800ns (MAX). DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY WRITE/ERASE CYCLE CE#-CONTROLLED WRITE/ERASE Note 1 A ...
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... Status Erase 1 Array Suspend Array Erase 1 Status Complete DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY Table 6 Command State Machine Current/Next States COMMAND INPUTS (and next state) Read Write Block ...
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... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc. DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ...
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... Rev. B ................................................................................................................................................................................... 5/01 • Changed I MAX from Original document ............................................................................................................................................................. 6/00 DataSheet4U.com 1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ENHANCED BOOT BLOCK FLASH MEMORY DataSheet4U.com Micron Technology, Inc., reserves the right to change products or specifications without notice. ...