MT58V512V36D Micron Technology, MT58V512V36D Datasheet - Page 13

• Manufacturer Part Number: MT58V512V36D
• Description: (MT58xxxx) 16Mb SYNCBURST SRAM
• Manufacturer: Micron Technology

3.3V V
RATINGS*
Voltage on V
Voltage on V
V
V
Storage Temperature (TQFP) .............. -55ºC to +150ºC
Storage Temperature (FBGA) .............. -55ºC to +125ºC
Junction Temperature** ................................... +150ºC
Short Circuit Output Current ............................ 100mA
2.5V V
RATINGS*
Voltage on V
Voltage on V
V
V
Storage Temperature (TQFP) .............. -55ºC to +150ºC
Storage Temperature (FBGA) .............. -55ºC to +125ºC
Junction Temperature** ................................... +150ºC
Short Circuit Output Current ............................ 100mA
3.3V V
(0ºC T
NOTE: 1. All voltages referenced to V
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
IN
IN
IN
IN
(DQx) .................................... -0.5V to V
(inputs) ................................... -0.5V to V
(DQx) .................................... -0.3V to V
(inputs) ................................... -0.3V to V
Relative to V
Relative to V
Relative to V
Relative to V
2. For 3.3V V
3. MODE has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. V
A
DD
DD
DD
Overshoot:
Undershoot: V
Power-up:
For 2.5V V
Overshoot:
Undershoot: V
Power-up:
curves are available upon request.
DD
+70ºC; V
, ABSOLUTE MAXIMUM
, ABSOLUTE MAXIMUM
, 3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
Q should never exceed V
DD
DD
DD
DD
Q Supply
Q Supply
Supply
Supply
SS
SS
SS
SS
DD
DD
DD
................................ -0.5V to +4.6V
................................ -0.5V to +4.6V
................................ -0.3V to +3.6V
................................ -0.3V to +3.6V
:
:
= +3.3V ±0.165V; V
V
V
V
V
IH
IL
IH
IH
IL
IH
-0.7V for t
-0.5V for t
OH
+4.6V for t
+3.6V and V
+3.6V for t
+2.65V and V
, V
OL
testing is shown in Figure 2. AC load current is higher than the stated DC values. AC I/O
SS
DD
(GND).
. V
DD
t
t
KC/2 for I
KC/2 for I
Output(s) disabled,
t
t
DD
DD
KC/2 for I
KC/2 for I
DD
CONDITIONS
0V
0V
and V
3.135V for t
I
I
OH
2.375V for t
DD
DD
OL
Q = +3.3V ±0.165V unless otherwise noted)
DD
DD
= -4.0mA
Q + 0.5V
Q + 0.3V
= 8.0mA
V
V
DD
IN
IN
+ 0.5V
+ 0.3V
Q can be connected together.
20mA
20mA
20mA
20mA
V
V
DD
DD
200ms
200ms
13
PIPELINED, DCD SYNCBURST SRAM
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional opera-
tion of the device at these or any other conditions above
those indicated in the operational sections of this speci-
fication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reli-
ability.
**Maximum junction temperature depends upon pack-
age type, cycle time, loading, ambient temperature and
airflow. See Micron Technical Note TN-05-14 for more
information.
16Mb: 1 MEG x 18, 512K x 32/36
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
V
V
IL
V
DD
IL
OH
DD
OL
IH
IL
O
I
Q
3.135
3.135
MIN
-0.3
-1.0
-1.0
2.0
2.4
–
V
DD
MAX
3.465
3.465
0.8
1.0
1.0
0.4
–
+ 0.3
UNITS
µA
µA
©2000, Micron Technology, Inc.
V
V
V
V
V
V
ADVANCE
NOTES
1, 2
1, 2
1, 4
1, 4
1, 5
3
1