2SC3371 Inchange Semiconductor, 2SC3371 Datasheet

2SC3371

Manufacturer Part Number

2SC3371

Description

Power Transistor

Manufacturer

Inchange Semiconductor

Datasheet

1.2SC3371.pdf (2 pages)

Current page: 1 of 2
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INCHANGE Semiconductor

isc

DESCRIPTION

·Collector-Emiiter Sustaining Voltage-

·Low Collector Saturation Voltage

·High Speed Switching

APPLICATIONS

·Designed for power switching applications.

ABSOLUTE MAXIMUM RATINGS (T

isc Website：www.iscsemi.cn

SYMBOL

: V

CBO

CEO

EBO

CEO(SUS)

CE(sat)

stg

Silicon NPN Power Transistor

= 1.0V(Max.)@ I

= 500V(Min.)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

=25℃

PARAMETER

= 8A

=25

℃

)

-55~150

VALUE

800

500

200

150

UNIT

℃

isc

Product Specification

2SC3371

Related parts for 2SC3371

2SC3371 Summary of contents

Page 1

... CM I Base Current-Continuous B B Collector Power Dissipation =25℃ Junction Temperature j Storage Temperature Range T stg isc Website：www.iscsemi. ℃ = VALUE UNIT 800 V 500 200 W ℃ 150 ℃ -55~150 isc Product Specification 2SC3371 · ...

Page 2

... Product Specification CONDITIONS I = 0.5A; L= 25mH 800V 5V 0. 1.6A 200V CC 2SC3371 MIN TYP. MAX UNIT 500 V 1.0 V 1.5 V 0 μs 1.0 μs 3.0 μs 1.0 ...

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