BUP200D Siemens Semiconductor Group, BUP200D Datasheet - Page 3

• Manufacturer Part Number: BUP200D
• Description: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Electrical Characteristics, at T
Parameter
Switching Characteristics, Inductive Load at T
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Total turn-off loss energy
V
R
Free-Wheel Diode
Diode forward voltage
I
I
Reverse recovery time
I
d i
T
T
Reverse recovery charge
I
d i
T
T
F
F
F
F
j
j
j
j
CC
CC
CC
CC
CC
Gon
Gon
Goff
Goff
Goff
F
F
= 4 A, V
= 4 A, V
= 4 A, V
= 4 A, V
= 25 °C
= 125 °C
= 25 °C
= 125 °C
/ d t = -800 A/µs
/ d t = -800 A/µs
= 600 V, V
= 600 V, V
= 600 V, V
= 600 V, V
= 600 V, V
= 100
= 100
= 100
= 100
= 100
GE
GE
R
R
= -300 V, V
= -300 V, V
= 0 V, T
= 0 V, T
GE
GE
GE
GE
GE
= 15 V, I
= 15 V, I
= -15 V, I
= -15 V, I
= -15 V, I
j
j
= 25 °C
= 125 °C
GE
GE
= 0 V
= 0 V
C
C
C
C
C
= 1.5 A
= 1.5 A
= 1.5 A
= 1.5 A
= 1.5 A
j
= 25 °C, unless otherwise specified
Symbol
t
t
t
t
E
V
t
Q
3
d(on)
r
d(off)
f
rr
off
F
rr
j
= 125 °C
min.
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
-
-
30
20
170
15
0.25
2.3
1.9
60
1
max.
-
-
-
-
50
30
250
25
3
100
1.8
BUP 200 D
Dec-06-1995
Unit
ns
nS
ns
mWs
V
ns
µC