BUP200D Siemens Semiconductor Group, BUP200D Datasheet - Page 6

• Manufacturer Part Number: BUP200D
• Description: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)
• Manufacturer: Siemens Semiconductor Group

I
Csc
Typ. gate charge
V
parameter: I
Short circuit safe operating area
I
Semiconductor Group
Csc
parameter: V
/ I
V
GE
C(90°C)
GE
= f ( V
= ( Q
20
16
14
12
10
10
V
8
6
4
2
0
6
4
2
0
0
0
CE
Gate
200
C puls
) , T
4
GE
)
= ± 15 V, t
j
400
= 150°C
8
= 1 A
600
12
400 V
800
16
sc
1000 1200
20
10 µs, L < 25 nH
24
800 V
Q
V
Gate
1600
32
6
I
Cpuls
Typ. capacitances
C = f (V
parameter: V
Reverse biased safe operating area
I
Cpuls
parameter: V
/ I
C
= f (V
2.5
1.5
1.0
0.5
0.0
CE
0
)
CE
200
GE
GE
) , T
= 0 V, f = 1 MHz
= 15 V
400
j
= 150°C
600
800 1000 1200
BUP 200 D
Dec-06-1995
V
1600