BUP200D Siemens Semiconductor Group, BUP200D Datasheet - Page 4

• Manufacturer Part Number: BUP200D
• Description: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)
• Manufacturer: Siemens Semiconductor Group

Power dissipation
P
parameter: T
P
Safe operating area
I
parameter: D = 0 , T
Semiconductor Group
C
tot
I
tot
C
= ( V
= ( T
10
10
10
10
55
45
40
35
30
25
20
15
10
W
A
-1
-2
5
0
1
0
10
CE
0
C
0
)
)
20
j
150 °C
40
10
1
C
60
= 25°C , T
80
10
2
100
j
DC
120
150 °C
t
10
p = 4.5µs
3
10 µs
100 µs
1 ms
10 ms
T
V
°C
C
CE
V
160
4
Collector current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= ( T
K/W
10
10
10
10
3.6
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
= ( t
A
-1
-2
1
0
C
10
0
)
-5
p
)
20
GE
single pulse
10
p
40
-4
15 V , T
/ T
60
10
-3
j
80
150 °C
10
100
-2
IGBT
BUP 200 D
120
Dec-06-1995
D = 0.50
10
T
t
-1
°C
p
0.20
0.10
0.05
0.02
0.01
C
s
160
10
0