BUL903

Manufacturer Part NumberBUL903
DescriptionHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
ManufacturerSTMicroelectronics
BUL903 datasheet
 


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INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ARCING TEST SELF PROTECTED
APPLICATIONS
LAMP ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING USING 277V
HALF BRIDGE CURRENT-FED
CONFIGURATION
DESCRIPTION
The BUL903ED is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed in order to
operate
without
baker
clamp
protection. This enables saving from 2 up to 10
components in the application.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (V
CES
V
Collector-Emitter Voltage (IB = 0)
CEO
V
Emitter-Base Voltage (IC = 0)
EBO
I
Collector Current
C
I
Collector Peak Current (t
CM
p
I
Base Current
B
I
Base Peak Current (t
<5 ms)
BM
p
P
Total Dissipation at T c = 25
t ot
T
Storage Temperature
stg
T
Max. O perating Junction Temperature
j
June 1998
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
and
transil
= 0)
BE
<5 ms)
o
C
BUL903ED
3
2
1
TO-220
Value
Uni t
900
V
400
V
7
V
5
A
8
A
2
A
4
A
70
W
o
-65 to 150
C
o
150
C
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BUL903 Summary of contents

  • Page 1

    ... APPLICATIONS LAMP ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING USING 277V HALF BRIDGE CURRENT-FED CONFIGURATION DESCRIPTION The BUL903ED is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed in order to operate without baker clamp protection ...

  • Page 2

    ... BUL903ED THERMAL DATA R Thermal Resistance Junction-Case t hj- Thermal Resistance Junction-Ambient t hj- amb ELECTRICAL CHARACTERISTICS (T Symb ol Parameter I Collector Cut-off CES Current ( Base-Emitter Leakage EBO Current V Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat ) Saturation Voltage V Base-Emitter BE(s at) Saturation Voltage h DC Current G ain ...

  • Page 3

    ... Safe Operating Areas DC Current Gain Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage BUL903ED 3/6 ...

  • Page 4

    ... BUL903ED Reverse Biased SOA Resistive Load Switching Test Circuit Energy Rating Test Circuit Vin Tp 4/6 Vcc C L=2mH Rg T1 TUT Vbb + SC12620 ...

  • Page 5

    ... MAX. MIN. TYP. 4.60 0.173 1.32 0.048 2.72 0.094 0.050 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 0.645 14.0 0.511 2.95 0.104 15.75 0.600 6.6 0.244 3.93 0.137 3.85 0.147 BUL903ED MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 P011C 5/6 ...

  • Page 6

    ... BUL903ED Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...