BAV102-BAV103 NXP Semiconductors, BAV102-BAV103 Datasheet - Page 3

• Manufacturer Part Number: BAV102-BAV103
• Description: Single General-purpose Switching Diodes
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAV102_BAV103_3
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 7.
[1]
Table 8.
T
[1]
[2]
Symbol
I
P
T
T
T
Symbol
R
R
Symbol
V
I
C
t
FSM
R
rr
amb
j
amb
stg
tot
F
th(j-a)
th(j-t)
d
Pulse test: t
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Pulse test: t
When switched from I
= 25 C unless otherwise specified.
j
= 25 C prior to surge.
Parameter
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
Limiting values
Thermal characteristics
Characteristics
BAV102
BAV103
p
p
300 s;
300 s;
F
Rev. 03 — 16 August 2007
= 30 mA to I
0.02.
0.02.
…continued
R
= 30 mA; R
Conditions
square wave
T
Conditions
in free air
Conditions
I
I
V
V
V
V
f = 1 MHz; V
F
F
amb
R
R
R
R
t
t
t
= 100 mA
= 200 mA
p
p
p
= 150 V
= 150 V; T
= 200 V
= 200 V; T
= 1 s
= 100 s
= 1 s
25 C
L
= 100 ; measured at I
Single general-purpose switching diodes
R
j
j
= 0 V
= 150 C
= 150 C
BAV102; BAV103
[3]
[2]
[1]
[1]
[2]
Min
-
-
-
-
-
Min
-
-
Min
-
-
-
-
-
-
-
-
R
65
65
= 3 mA.
Typ
-
-
Typ
-
-
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
9
3
1
400
175
+175
+175
Max
375
300
Max
1.0
1.25
100
100
100
100
5
50
Unit
A
A
A
mW
C
C
C
Unit
K/W
K/W
Unit
V
V
nA
nA
pF
ns
3 of 10
A
A