MMBT2907AE Jiangsu Changjiang Electronics Technology Co., Ltd., MMBT2907AE Datasheet
MMBT2907AE
Manufacturer Part Number
MMBT2907AE
Description
Wbfbp-03a Plastic-encapsulate Transistors
Manufacturer
Jiangsu Changjiang Electronics Technology Co., Ltd.
Datasheet
1.MMBT2907AE.pdf
(4 pages)
DESCRIPTION
PNP Epitaxial planar type Silicon Transistor
FEATURES
Complementary NPN Type available(MMBT2222AE)
PPLICATION
general purpose amplifier, switching.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:2F
MAXIMUM RATINGS T
Symbol
V
V
V
I
P
T
T
C
ELECTRICAL CHARACTERISTICS（Tamb=25℃
J
stg
CBO
CEO
EBO
C
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
B E
MMBT2907AE
2F
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Parameter
A
=25℃ unless otherwise noted
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03A Plastic-Encapsulate Transistors
TRANSISTOR
Symbol
-55to+150
V
V
V
V
V
h
h
h
h
h
CE
BE
(BR)CBO
(BR)CEO
(BR)EBO
I
I
C
Value
NF
CBO
EBO
FE(1)
FE(2)
FE(3)
FE(4)
FE(5)
f
-600
(sat)
(sat)
150
150
T
ob
-60
-60
-5
I
I
I
V
V
V
V
V
V
V
I
I
I
I
V
f=
V
V
f=1KHz,Rs=1KΩ
C
C
E
C
C
C
C
CB
EB
CE
CE
CE
CE
CE
CE
CB
CB
= -10
= -10mA, I
=-10
=-500mA,I
=-150mA,I
=-500mA,I
=-150mA,I
Test
100MHz
unless otherwise specified）
= -5V,I
=-50 V,I
=-10V,I
=-10V,I
=-10V,I
=-10V,I
=-10V,I
=-20V, I
=-10V, I
=-5V,I
Units
mW
μ
mA
μ
℃
℃
V
V
V
A,I
c
A,I
C
conditions
=-0.1mA,
C
C
C
C
C
=0
E
E
C
=-0.1mA
=-1mA
=-10mA
=-150mA
=-500mA
B
B
B
B
B
E
=0
=
=0
C
=0
=-50mA
=-15mA
=-50mA
=-15mA
=0
0
=-50mA
, f=
1M
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
Hz
MIN
100
100
100
200
-60
-60
75
50
-5
BACK
TOP
TYP
B
E
MAX
C
-0.01
-0.01
C
300
-1.6
-0.4
-2.6
-1.3
8
4
B
E
UNIT
MHz
μ
μ
pF
dB
V
V
V
V
V
A
A
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MMBT2907AE Summary of contents
Page 1
... JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2907AE DESCRIPTION PNP Epitaxial planar type Silicon Transistor FEATURES Complementary NPN Type available(MMBT2222AE) PPLICATION general purpose amplifier, switching. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: MAXIMUM RATINGS T =25℃ ...
Page 2
... Delay time Rise time Storage time Fall time Typical Characteristics unless otherwise specified） Symbol Test conditions t V =-30V =-150mA , I =-15mA =-6V, I =-150mA =-I =-15mA MIN TYP MAX UNIT 225 MMBT2907AE ...
Page 3
...
Page 4
illim ...