ST2301A Stanson Technology, ST2301A Datasheet - Page 3

• Manufacturer Part Number: ST2301A
• Description: P Channel Enhancement Mode MOSFET
• Manufacturer: Stanson Technology

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ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted )
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Parameter
Symbol
V
R
V
(BR)DSS
I
t
t
I
I
C
DS(on)
C
GS(th)
D(on)
V
Q
C
Q
d(on)
d(off)
g
Q
GSS
DSS
tr
oss
tf
SD
iss
rss
gs
gd
fs
g
V
V
V
V
V
V
V
V
V
V
DS
DS
DS
GS
GS
I
GS
S
DS
DS
DS
DS
=VGS,I
=-1.6A,V
≦ -5V,V
≦ -5V,V
=-2.5V,I
=-4.5V,I
=0V,I
=0V,V
=-5V,I
V
=-20V,V
=-20V,V
Condition
V
I
GEN
V
V
V
T
F=1MH
GS
D
V
R
R
I
P Channel Enhancement Mode MOSFET
DS
DS
DD
J
≣ -2.8A
D
GS
G
=55 ℃
L
=-4.5V
=-1A
=6 Ω
=-4.5V
=6 Ω
=-6V
=-6V
=-6V
D
=0V
D
GS
=-250uA
GS
GS
D
=-250uA
D
D
=-2.8V
GS
= ± 12V
GS
GS
=-4.5V
=-2.5V
=-2.0A
=-2.8A
z
=0V
=0V
=0V
ST2301A
-0.45
Min
-20
-6
-3
0.080
0.120
0.85
-0.8
Typ
415
223
ST2301A 2005. V1
6.5
5.8
1.7
87
13
36
42
34
± 100
Max Unit
-1.5
-1.2
-3.0A
-10
10
25
60
70
60
-1
nA
uA
nC
nS
pF
Ω
V
V
A
S
V