2SK3097LS Sanyo Semicon Device, 2SK3097LS Datasheet

2SK3097LS

Manufacturer Part Number

2SK3097LS

Description

N-Channel Silicon MOSFET General-Purpose Switching Device

Manufacturer

Sanyo Semicon Device

Datasheet

1.2SK3097LS.pdf (3 pages)

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Ordering number : EN8626

2SK3097LS

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

*1 V DD =50V, L=5mH, I AV =6.5A

*2 L 5mH, single pulse

Electrical Characteristics at Ta=25 C

Marking : K3097

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Enargy (Single Pulse) *1

Avalanche Current *2

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Low Qg.

Ultrahigh-Speed Switching Applications.

Avalanche resistance guarantee.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

V (BR)DSS

R DS (on)

V GS (off)

Symbol

V DSS

V GSS

I DSS

I GSS

E AS

Tstg

I DP

Tch

I AV

P D

yfs

I D

SANYO Semiconductors

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

PW 10 s, duty cycle 1%

Tc=25 C

I D =1mA, V GS =0V

V DS =320V, V GS =0V

V GS = 30V, V DS =0V

V DS =10V, I D =1mA

V DS =10V, I D =3.5A

I D =3.5A, V GS =15V

2SK3097LS

Conditions

DATA SHEET

N0806QB SY IM TC-00000314

min

400

3.0

1.8

Ratings

typ

Ratings

0.68

3.6

Continued on next page.

--55 to +150

max

120.7

0.87

400

150

6.5

2.0

6.5

100

1.0

4.0

No.8626-1/3

Unit

Datasheet pdf - http://www.DataSheet4U.net/

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