2SK3099LS Sanyo Semicon Device, 2SK3099LS Datasheet - Page 2

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2SK3099LS

Manufacturer Part Number
2SK3099LS
Description
N-Channel Silicon MOSFET General-Purpose Switching Device
Manufacturer
Sanyo Semicon Device
Datasheet
www.DataSheet.co.kr
Continued from preceding page.
Note : Be careful in handling the 2SK3099LS because it has no protection diode between gate and source.
Package Dimensions
unit : mm (typ)
7509-002
Switching Time Test Circuit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Diode Forward Voltage
P.G
PW=10 s
D.C. 0.5%
2.55
1 2 3
10.0
Parameter
V GS =15V
0.9
0.75
1.2
2.55
R GS
50
G
3.2
V DD =200V
D
S
4.5
I D =6A
R L =33.3
0.7
2SK3099LS
1.2
2.8
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
Symbol
t d (on)
t d (off)
V OUT
Coss
Crss
V SD
Ciss
Qg
t r
t f
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =200V, V GS =10V, I D =9A
I S =9A, V GS =0V
2SK3099LS
Avalanche Resistance Test Circuit
Conditions
15V
0V
50
50
min
Ratings
typ
1150
0.95
350
150
20
35
85
45
40
DUT
L
max
1.2
No.8628-2/3
Unit
nC
pF
pF
pF
ns
ns
ns
ns
V DD
V
Datasheet pdf - http://www.DataSheet4U.net/

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