2SK3487 Sanyo Semicon Device, 2SK3487 Datasheet

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2SK3487

Manufacturer Part Number
2SK3487
Description
General-Purpose Switching Device Applications
Manufacturer
Sanyo Semicon Device
Datasheet
Ordering number : ENN8192
2SK3487
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : LD
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V (BR)DSS
R DS (on) 1
R DS (on) 2
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
P D
Tch
yfs
I D
PW 10 s, duty cycle 1%
Mounted on a ceramic board (250mm
Tc=25 C
I D =1mA, V GS =0
V DS =20V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =4A
I D =4A, V GS =4V
I D =2A, V GS =2.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
2SK3487
Conditions
Conditions
2
0.8mm)
31005PA TS IM TA-100581
min
0.4
7.2
20
Ratings
typ
www.DataSheet4U.com
Ratings
1000
210
150
12
25
33
Continued on next page.
--55 to +150
max
150
1.5
3.5
1.3
20
10
32
10
33
47
8
1
No.8192-1/4
Unit
Unit
m
m
pF
pF
pF
W
W
V
V
A
A
V
V
S
C
C
A
A

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2SK3487 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK3487 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... Switching Time Test Circuit 4V 0V 1.5 PW=10 s D.C. 1% P.G 0 =1. 0.7 0.8 0.9 1.0 0 IT05509 www.DataSheet4U.com Ratings min typ max 2.2 3.9 0.90 1 =10V = =2 OUT G 50 2SK3487 0.25 0.50 0.75 1.00 1.25 1.50 Gate-to-Source Voltage Unit =10V 1.75 2.00 IT05510 No.8192-2/4 ...

Page 3

... Drain Current 4 =10V I D =8A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 Total Gate Charge 2SK3487 50 Tc= --60 IT05511 =10V 1 0 0.2 10 IT05513 10000 ...

Page 4

... Amibient Tamperature Note on usage : Since the 2SK3487 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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