2SK3615 Sanyo Semicon Device, 2SK3615 Datasheet
2SK3615
Manufacturer Part Number
2SK3615
Description
General-Purpose Switching Device Applications
Manufacturer
Sanyo Semicon Device
Datasheet
1.2SK3615.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3615-TL-E
Manufacturer:
ROHM
Quantity:
3 000
www.DataSheet4U.com
Ordering number : ENN8332
2SK3615
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : K3615
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate-to-Source Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V DSS
V GSS
t d (on)
t d (off)
I DSS
I GSS
Coss
Crss
Tstg
Ciss
I DP
Tch
P D
yfs
I D
t r
t f
PW 10 s, duty cycle 1%
Tc=25 C
I D =1mA, V GS =0V
V DS =60V, V GS =0V
V GS = 16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =6A
I D =6A, V GS =10V
I D =6A, V GS =4V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
2SK3615
Conditions
Conditions
62005PA MS IM TB-00001381
min
1.2
4.8
60
Ratings
typ
Ratings
790
115
45
60
88
10
40
70
60
8
Continued on next page.
--55 to +150
max
150
2.6
60
20
12
48
20
10
60
85
1
1
No.8332-1/4
Unit
Unit
m
m
pF
pF
pF
ns
ns
ns
ns
W
W
V
V
A
A
V
V
S
C
C
A
A
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2SK3615 Summary of contents
Page 1
... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK3615 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...
Page 2
... 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 Drain-to-Source Voltage 2SK3615 Symbol Conditions =30V =10V =12A Qgs V DS =30V =10V =12A Qgd V DS =30V =10V =12A =12A =0V Package Dimensions unit : mm 7003-004 6.5 5 Gate ...
Page 3
... Drain Current =30V =12A Total Gate Charge 2SK3615 120 Ta=25 C 110 I D =6A 100 --60 --40 IT09341 1 0.1 7 ...
Page 4
... Ambient Temperature Note on usage : Since the 2SK3615 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...