2SK3617 Sanyo Semicon Device, 2SK3617 Datasheet

2SK3617

Manufacturer Part Number

2SK3617

Description

General-Purpose Switching Device Applications

Manufacturer

Sanyo Semicon Device

Datasheet

1.2SK3617.pdf (4 pages)

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Ordering number : ENN8112

2SK3617

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V DSS

V GSS

t d (on)

t d (off)

I GSS

I DSS

Coss

Crss

Tstg

Ciss

I DP

Tch

P D

yfs

I D

t r

t f

PW 10 s, duty cycle 1%

Tc=25 C

I D =1mA, V GS =0

V DS =100V, V GS =0

V GS = 16V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =3A

I D =3A, V GS =10V

I D =3A, V GS =4V

V DS =20V, f=1MHz

See specified Test Circuit.

2SK3617

Conditions

min

21405PA TS IM TA-100867

100

1.2

Ratings

typ

Ratings

180

225

530

Continued on next page.

--55 to +150

max

100

150

225

315

2.6

No.8112-1/4

Unit

Related parts for 2SK3617

2SK3617 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK3617 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... G P.G 50 2SK3617 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 Drain-to-Source Voltage 2SK3617 Symbol Conditions =50V =10V =6A Qgs V DS =50V =10V =6A Qgd V DS =50V =10V = =6A Package Dimensions unit : mm 2092B 6.5 5 0.6 2 =10V 4 ...

Page 3

... Drain Current =50V = Total Gate Charge 2SK3617 420 Tc=25 C 400 I D =3A 380 360 340 320 300 280 260 240 220 200 180 160 140 120 100 ...

Page 4

... Ambient Temperature Note on usage : Since the 2SK3617 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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