2SJ612 Sanyo Semicon Device, 2SJ612 Datasheet

2SJ612

Manufacturer Part Number

2SJ612

Description

Ultrahigh-Speed Switching Applications

Manufacturer

Sanyo Semicon Device

Datasheet

1.2SJ612.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SJ612(-Z)

Manufacturer:

NEC/RENESAS

Quantity:

12 500

Current page: 1 of 4
Download datasheet (62Kb)

Ordering number : ENN7178A

Preliminary

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : JS

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

2.5V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

I D =- -1mA, V GS =0

V DS =--20V, V GS =0

V GS = 8V, V DS =0

V DS =--10V, I D =--1mA

V DS =--10V, I D =- -1.3A

I D =- -1.3A, V GS =--4V

I D =- -0.7A, V GS =--2.5V

PW 10 s, duty cycle 1%

Mounted on a ceramic board (250mm

Tc=25

2SJ612

Conditions

Package Dimensions

unit : mm

2062A

Conditions

N1502 TS IM TA-3870 / 41002 TS IM TA-3522

0.4

(Bottom view)

0.75

0.8mm)

1.5

3.0

4.5

1.6

0.5

[2SJ612]

min

P-Channel Silicon MOSFET

--0.4

--20

2.0

Ratings

typ

1 : Gate

2 : Drain

3 : Source

SANYO : PCP

Ratings

190

250

2.8

Continued on next page.

--55 to +150

1.5

0.4

2SJ612

max

--1.3

--2.5

245

350

150

--20

--10

1.0

3.5

--1

No.7178-1/4

Unit

Related parts for 2SJ612

2SJ612 Summary of contents

Page 1

... I DSS V DS =--20V GSS 8V (off =--10V =--1mA yfs V DS =--10V -1. (on -1.3A =-- (on -0.7A =--2.5V N1502 TS IM TA-3870 / 41002 TS IM TA-3522 P-Channel Silicon MOSFET 2SJ612 [2SJ612] 4.5 1.5 1.6 0.4 0 0.4 1.5 3.0 (Bottom view Gate 0. Drain ...

Page 2

... See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit =--10V -4V -2.5A Qgs V DS =--10V -4V -2.5A Qgd V DS =--10V -4V -2. =--2.5A --10V --1. =7. OUT 2SJ612 S --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 --0.7 --0.8 --0.9 --1.0 0 ...

Page 3

... Drain Current -- --10V --2.5A --3 --2 -- 0.5 1.0 1.5 2.0 Total Gate Charge 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature 2SJ612 -- --10V --1 --0 --0. --1.0 IT04257 1000 100 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2002. Specifications and information herein are subject to change without notice. 2SJ612 PS No.7178-4/4 ...

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