2SJ664 Sanyo Semicon Device, 2SJ664 Datasheet

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2SJ664

Manufacturer Part Number
2SJ664
Description
General-Purpose Switching Device
Manufacturer
Sanyo Semicon Device
Datasheet
www.DataSheet4U.com
Ordering number : EN8589
2SJ664
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Note : *1 V DD =30V, L=200 H, I AV =--17A
Electrical Characteristics at Ta=25 C
Marking : J664
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
*2 L 200 H, Single pulse
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V DSS
V GSS
I DSS
I GSS
E AS
Tstg
I DP
Tch
I AV
P D
yfs
I D
I D =--1mA, V GS =0V
V DS =- -100V, V GS =0V
V GS = 16V, V DS =0V
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =- -8A
I D =--8A, V GS =- -10V
I D =--8A, V GS =- -4V
PW 10 s, duty cycle 1%
Tc=25 C
2SJ664
Conditions
Conditions
N1805QA TS IM TB-00001097
min
--100
--1.2
9
Ratings
typ
Ratings
102
138
15
Continued on next page.
--55 to +150
max
--100
1.65
150
--2.6
--17
--68
--17
136
193
20
50
38
10
--1
No.8589-1/4
Unit
Unit
m
m
mJ
W
W
V
V
A
A
A
V
V
S
C
C
A
A

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2SJ664 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SJ664 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... V DS =--50V -10V =--17A =--17A =0V Package Dimensions unit : mm 7001-003 4.5 1.3 1.2 0 Gate 2 : Drain 3 : Source 2.55 SANYO : SMP Avalanche Resistance Test Circuit --50V -- =6. OUT 2SJ664 S Ratings min typ max 2090 155 108 17 105 185 --0.93 4.5 10 ...

Page 3

... Drain Current Time -- --50V --10V 3 2 100 --0.1 Drain Current 2SJ664 --3 --4 --5 --6 --7 IT08780 --8 A --5 --6 --7 --8 --9 --10 IT08782 --10 IT08784 ...

Page 4

... Ambient Temperature www.DataSheet4U.com Note on usage : Since the 2SJ664 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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