2SJ667 Sanyo Semicon Device, 2SJ667 Datasheet

2SJ667

Manufacturer Part Number

2SJ667

Description

General-Purpose Switching Device

Manufacturer

Sanyo Semicon Device

Datasheet

1.2SJ667.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SJ667

Manufacturer:

NEC/RENESAS

Quantity:

12 500

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Ordering number : ENN8248

2SJ667

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Note : *1 V DD =30V, L=50 H, I AV =--42A

Electrical Characteristics at Ta=25 C

Marking : J667

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

Motor drive, DC / DC converter.

Avalanche resistance guarantee.

*2 L 50 H, Single pulse

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V DSS

V GSS

I DSS

I GSS

E AS

Tstg

I DP

Tch

I AV

P D

yfs

I D

I D =--1mA, V GS =0

V DS =- -100V, V GS =0

V GS = 16V, V DS =0

V DS =- -10V, I D =--1mA

V DS =- -10V, I D =- -21A

I D =--21A, V GS =--10V

I D =--21A, V GS =--4V

PW 10 s, duty cycle 1%

Tc=25 C

2SJ667

Conditions

31005QA TS IM TB-00001248

min

--100

--1.2

Ratings

typ

Ratings

Continued on next page.

--55 to +150

max

--100

--168

100

150

--2.6

--42

2.5

--1

No.8248-1/4

Unit

Related parts for 2SJ667

2SJ667 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SJ667 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... Drain 3 : Source SANYO : TO-3PB Avalanche Resistance Test Circuit --50V --21A R L =2. OUT 2SJ667 S Ratings min typ 6350 430 250 47 360 480 220 110 20 20 --1. 2SJ667 0V 50 --10V Unit max --1 No.8248-2/4 ...

Page 3

... Drain Current Time -- I D 1000 100 --0.1 --1.0 Drain Current 2SJ667 --3 --4 --5 --6 --7 IT08810 --21A --5 --6 --7 --8 --9 --10 IT08812 --10 --100 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. 2SJ667 ...

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