ZXTN2010Z Zetex Semiconductors plc., ZXTN2010Z Datasheet - Page 4

• Manufacturer Part Number: ZXTN2010Z
• Description: 60v Npn Low Saturation Medium Power Transistor In Sot89
• Manufacturer: Zetex Semiconductors plc.

ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width
ZXTN2010Z
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
S E M I C O N D U C T O R S
SYMBOL
BV
BV
BV
BV
I
I
R
I
V
V
V
H
f
C
t
t
CBO
CER
EBO
T
ON
OFF
amb
CE(SAT)
BE(SAT)
BE(ON)
FE
OBO
CBO
CER
CEO
EBO
1k
300 s; duty cycle
= 25°C unless otherwise stated)
4
MIN.
150
150
100
100
60
55
20
7
TYP.
190
190
970
910
200
130
170
200
105
760
8.1
80
17
31
42
35
40
90
40
2%.
MAX. UNIT CONDITIONS
1100
1050
100
125
230
300
0.5
0.5
50
10
30
55
65
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
C
C
C
C
C
C
C
E
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
=1A, I
=1A, I
=2A, I
=6A, I
=2A, V
=5A, V
=10A, V
=100 A
=100 A
=1 A, RB 1k
=10mA*
=100mA, I
=6A, I
=6A, V
=10mA, V
=100mA, V
=1A, V
=I
=120V,T
=120V,T
=6V
=120V
=120V
=10V, f=1MHz*
B2
ISSUE 2 - MAY 2006
=100mA
B
B
B
B
CE
CE
B
=100mA*
=50mA*
=50mA*
=300mA*
CE
CC
CE
=300mA*
=1V*
=1V*
=1V*
=1V*
=10V,
amb
amb
CE
B
CE
=5mA*
=1V*
=100 C
=100 C
=10V