2N5401HR STMicroelectronics, 2N5401HR Datasheet

no-image

2N5401HR

Manufacturer Part Number
2N5401HR
Description
Hi-rel Bipolar Transistors
Manufacturer
STMicroelectronics
Datasheet
Features
Description
The 2N5401HR is a silicon planar epitaxial PNP
transistor in TO-18 and LCC-3 packages. It is
specifically designed for aerospace Hi-Rel
applications and ESCC qualified according to the
5202-014 specification. In case of conflict
between this datasheet and ESCC detailed
specification, the latter prevails.
Table 1.
January 2010
Operating temperature range
SOC5401HRB
Order codes
2N5401HR
Hi-Rel PNP bipolar transistor
Linear gain characteristics
ESCC qualified
European preferred part list - EPPL
Radiation level: lot specific total dose contact
marketing for specified level
2N5401T1
SOC5401
H
FE
at 10 V - 150 mA
I
C
BV
(max)
Device summary
CEO
Packages
TO-18
TO-18
LCC-3
LCC-3
-65°C to +200°C
Lead finish
Solder Dip
Solder Dip
150 V
0.5 A
> 60
Gold
Gold
Gold
Gold
Hi-Rel PNP bipolar transistor 150 V - 0.5 A
Doc ID 16934 Rev 1
520201401
520201402
520201404
520201405
2N5401T1
SOC5401
Marking
Figure 1.
ESCC Flight
ESCC Flight
Engineering
Engineering
TO-18
model
model
Type
Internal schematic diagram
3
1
2
EPPL
Yes
2N5401HR
3
LCC-3
Waffle pack
Waffle pack
Packaging
Strip pack
Strip pack
2
www.st.com
1
1/8
8

Related parts for 2N5401HR

2N5401HR Summary of contents

Page 1

... European preferred part list - EPPL ■ Radiation level: lot specific total dose contact marketing for specified level Description The 2N5401HR is a silicon planar epitaxial PNP transistor in TO-18 and LCC-3 packages specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5202-014 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails ...

Page 2

... Thermal resistance junction-ambient 1. When mounted on a 8x10x0.6 mm ceramic substrate. 2/8 Parameter = for 2N5401HR for SOC5401HRB ≤ 25 °C amb for 2N5401HR for SOC5401HRB (1) for SOC5401HRB ≤ 25 °C c for 2N5401HR Parameter __ __ Parameter __ (1) __ Doc ID 16934 Rev 1 2N5401HR Value -160 -150 -5 -0.6 -0.5 0.36 0.36 0.58 1.2 ...

Page 3

... Electrical characteristics °C unless otherwise specified. case Table 5. Electrical characteristics Symbol Collector-base cut-off I CBO current (I Emitter-base cut-off I EBO current (I Collector-base breakdown voltage V (BR)CBO ( Collector-emitter (1) breakdown voltage V (BR)CEO ( Emitter-base breakdown voltage V (BR)EBO ( Collector-emitter (1) V CE(sat) saturation voltage ...

Page 4

... Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. 4/8 Doc ID 16934 Rev 1 2N5401HR ® ...

Page 5

... DIM Ceramic Leadless Chip Carrier 3 mechanical data MIN. 1.16 0.45 1.90 2.90 2.40 0.40 1.35 2.40 Doc ID 16934 Rev 1 Package mechanical data mm. TYP MAX. 1.42 0.50 0.56 0.76 1 2.15 3.25 2.74 0.57 0.80 1.52 1.75 0.50 2.65 1.90 0.30 0041211J 5/8 ...

Page 6

... Package mechanical data 6/8 Doc ID 16934 Rev 1 2N5401HR D ...

Page 7

... Revision history Table 6. Document revision history Date 04-Jan-2010 Revision 1 Initial release Doc ID 16934 Rev 1 Revision history Changes 7/8 ...

Page 8

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 8/8 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 16934 Rev 1 2N5401HR ...

Related keywords