MRF9030MR1 Freescale Semiconductor, MRF9030MR1 Datasheet

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MRF9030MR1

Manufacturer Part Number
MRF9030MR1
Description
The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs
Manufacturer
Freescale Semiconductor
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large-signal, common-source amplifier applications in
26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW)
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface
• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
MOISTURE SENSITIVITY LEVEL
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 6
Motorola, Inc. 2003
MOTOROLA RF DEVICE DATA
Drain-Source Voltage
Gate-Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
Per JESD 22-A113
Designed for broadband commercial and industrial applications with frequen-
Output Power
Mount.
13 inch Reel.
13 inch Reel.
Derate above 25°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — -31 dBc
C
= 25°C
Test Methodology
Test Conditions
Characteristic
Freescale Semiconductor, Inc.
Rating
For More Information On This Product,
Go to: www.freescale.com
MRF9030MR1
MRF9030MBR1
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
CASE 1337-03, STYLE 1
CASE 1265-08, STYLE 1
MRF9030MBR1
MRF9030MR1
MRF9030MBR1
MRF9030MR1
LATERAL N-CHANNEL
TO-272-2
MRF9030MR1 MRF9030MBR1
RF POWER MOSFETs
TO-270-2
PLASTIC
PLASTIC
945 MHz, 30 W, 26 V
M2 (Minimum)
C7 (Minimum)
C6 (Minimum)
1 (Minimum)
- 65 to +150
+ 15, - 0.5
BROADBAND
Rating
Value
Class
0.93
Max
1.08
139
175
65
3
Order this document
by MRF9030M/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF9030MR1 Summary of contents

Page 1

... MHz LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 1265-08, STYLE 1 TO-270-2 PLASTIC MRF9030MR1 CASE 1337-03, STYLE 1 TO-272-2 PLASTIC MRF9030MBR1 Value Unit 65 Vdc + 15, - 0.5 Vdc 139 Watts 0.93 W/° +150 °C 175 °C Max Unit 1.08 °C/W Class 1 (Minimum) M2 (Minimum) C7 (Minimum) C6 (Minimum) Rating 3 MRF9030MR1 MRF9030MBR1 1 ...

Page 2

... MHz 930.1 MHz and f1 = 960.0 MHz 960.1 MHz) Input Return Loss ( Vdc PEP 250 mA, DD out 930.0 MHz 930.1 MHz and f1 = 960.0 MHz 960.1 MHz) MRF9030MR1 MRF9030MBR1 For More Information On This Product 25°C unless otherwise noted) Symbol Min I — DSS I — DSS I — ...

Page 3

... C5, C6 6.8 pF Chip Capacitors, B Case C8, C16, C17 10 µ Tantulum Chip Capacitors C9, C10 10 pF Chip Capacitors, B Case C13 1.8 pF Chip Capacitor, B Case (MRF9030MR1) 0.6-4.5 Variable Capacitor, Gigatrim (MRF9030MBR1) C18 220 µF Electrolytic Chip Capacitor L1, L2 12.5 nH Coilcraft Inductors WB1, WB2 20 mil Brass Shim (0.250 x 0.250) ...

Page 4

... Freescale Semiconductor, Inc. Figure 2. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030MR1) Figure 3. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 For More Information On This Product to: www.freescale.com 900 MHz Rev 02 MRF9030M MOTOROLA RF DEVICE DATA ...

Page 5

... Figure 5. Power Gain versus Output Power Figure 7. Intermodulation Distortion Products versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, TYPICAL CHARACTERISTICS Figure 6. Intermodulation Distortion versus η Figure 8. Power Gain and Efficiency versus Go to: www.freescale.com Output Power Output Power MRF9030MR1 MRF9030MBR1 5 ...

Page 6

... Freescale Semiconductor, Inc. Figure 9. Power Gain, Efficiency and IMD MRF9030MR1 MRF9030MBR1 For More Information On This Product, 6 η versus Output Power Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 7

... Freescale Semiconductor, Inc. Z source Z load Figure 10. Series Equivalent Input and Output Impedance (MRF9030MR1) MOTOROLA RF DEVICE DATA For More Information On This Product, Ω source load MHz Ω Ω 930 1.07 + j0.160 3.53 - j0.20 945 1.14 + j0.385 3.41 - j0.24 960 1.17 + j0.170 3.60 - j0.17 = Test circuit impedance as measured from gate to ground. ...

Page 8

... Freescale Semiconductor, Inc. Z source Z load Figure 11. Series Equivalent Input and Output Impedance (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 For More Information On This Product, 8 Ω source load MHz Ω Ω 930 1.0 - j0.18 3.05 - j0.09 945 1.0 - j0.10 3.00 - j0.07 960 1.0 - j0.03 2.95 - j0.03 = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground ...

Page 9

... Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, NOTES Go to: www.freescale.com MRF9030MR1 MRF9030MBR1 9 ...

Page 10

... PIN 3 BOTTOM VIEW ZONE J c1 DATUM H PLANE A1 A2 NOTE 7 MRF9030MR1 MRF9030MBR1 For More Information On This Product, 10 PACKAGE DIMENSIONS PIN ONE ...

Page 11

... NOTE 8 É É É É É É É É E2 VIEW Y-Y INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa MRF9030MR1 MRF9030MBR1 11 ...

Page 12

... E Motorola Inc. 2003 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 MRF9030MR1 MRF9030MBR1 For More Information On This Product, ◊ 12 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd. ...

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