SSM3J112TU Toshiba Semiconductor, SSM3J112TU Datasheet - Page 2

• Manufacturer Part Number: SSM3J112TU
• Description: Field-Effect Transistor Silicon P-Channel MOS Type
• Manufacturer: Toshiba Semiconductor

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Switching Time Test Circuit
Marking
Precaution
this product. For normal switching operation, V
voltage than V
(The relationship can be established as follows: V
Handling Precaution
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
(a) Test circuit
V
Take this into consideration when using the device.
When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is
th
−
can be expressed as the voltage between gate and source when the low operating current value is I
1
4V
JJ5
0
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
3
DD
IN
G
10 μs
th.
: t
= 4.7 Ω
= -10 V
r
, t
f
2
< 5 ns
IN
Equivalent Circuit
R
V
OUT
L
DD
GS (on)
1
GS (off)
3
requires a higher voltage than V
(b) V
(c) V
< V
2
OUT
th
IN
2
(top view)
< V
GS (on)
V
V
DD
DS (ON)
)
−4 V
0 V
t
th,
on
10%
and V
t
r
90%
10%
GS (off)
SSM3J112TU
t
90%
off
requires a lower
2007-11-01
D
t
f
=−0.1mA for