SSM3J112TU Toshiba Semiconductor, SSM3J112TU Datasheet - Page 4

• Manufacturer Part Number: SSM3J112TU
• Description: Field-Effect Transistor Silicon P-Channel MOS Type
• Manufacturer: Toshiba Semiconductor

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0.001
0.01
0.03
0.3
0.1
−1.6
−1.2
−0.8
−0.4
−10
3
1
−8
−6
−4
−2
−2
−1
0
0
0
0
Common Source
I D = −1 A
Ta = 25°C
Common Source
V GS = 0
Ta = 25°C
G
0.2
Drain-Source voltage V DS (V)
Dynamic input characteristic
−10
Total gate charge Q g (nC)
Drain current I
D
S
1
−12 V
0.4
|Y
I
I
DR
DR
fs
−100
| – I
– V
V DD = −24 V
D
D
DS
0.6
(mA)
Common Source
V DS = −5 V
Ta = 25°C
−1000
2
0.8
−10000
3
1
4
1000
800
600
400
200
500
300
100
300
100
50
30
10
30
10
−0.01
0
−0.1
5 Common Source
3
1
3
0
Ta = 25°C
f = 1 MHz
V GS = 0 V
t on
t r
b
a
20
−0.03
Drain-Source voltage V DS (V)
Ambient temperature Ta(°C)
t f
40
Drain current I D (A)
−1
t off
60
−0.1
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
C – V
PD - Ta
t – I
80 100 120 140 160
D
DS
−0.3
−10
Common Source
V DD = −15 V
V GS = 0∼ −4 V
Ta = 25°C
R G = 10 Ω
SSM3J112TU
−1
C oss
C iss
C rss
2007-11-01
−100
−3