SSM3J112TU Toshiba Semiconductor, SSM3J112TU Datasheet - Page 3

• Manufacturer Part Number: SSM3J112TU
• Description: Field-Effect Transistor Silicon P-Channel MOS Type
• Manufacturer: Toshiba Semiconductor

www.DataSheet4U.com
−1.5
−0.5
0.8
0.6
0.4
0.2
1.2
0.8
0.6
0.4
0.2
−2
−1
0
1
0
0
−25
1
0
0
Common Source
I D = −0.5 A
Common Source
Ta = 25°C
0
Drain-Source voltage V DS (V)
−10
Ambient temperature Ta (°C)
−0.5
−0.5
25
Drain current I D (A)
R
R
V GS = −4.0 V
−4.5
DS (ON)
DS (ON)
I
50
D
V GS = −4 V
– V
−1.0
−1
DS
−10 V
75
– Ta
−4.0
– I
D
V GS = −2.5 V
−3.0
−10 V
Common Source
Ta = 25°C
−3.5
100
−1.5
−1.5
125
−2.0
150
−2
3
−10000
−1000
−0.01
−100
−0.1
−2.5
−1.5
−0.5
−10
1.6
1.2
0.8
0.4
−1
−3
−2
−1
−25
2
0
0
0
0
Common Source
V DS = −5 V
0
Ta = 100°C
−1
Gate-Source voltage V GS (V)
Gate-Source voltage V GS (V)
Ambient temperature Ta (°C)
−5
25
R
DS (ON)
−2
I
50
Ta = 100°C
V
D
th
– V
−10
25°C
– Ta
−25°C
GS
−25°C
– V
75
−3
GS
Common Source
I D = −0.5 A
Common Source
V DS = −5 V
I D = −0.1 mA
100
25°C
−15
SSM3J112TU
−4
125
2007-11-01
150
−20
−5