IPD04N03LA Infineon Technologies AG, IPD04N03LA Datasheet
IPD04N03LA
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IPD04N03LA Summary of contents
Page 1
... /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD04N03LA IPU04N03LA DS (SMD version) DS(on),max D P-TO251-3-21 Value 50 50 350 890 6 ±20 115 -55 ... 175 55/175/ 3 Unit A mJ kV/µs ...
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... = = SMD version |>2 DS(on)max = =1.3 K/W the chip is able to carry 136 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD04N03LA IPU04N03LA Values min. typ. max 1 1 100 =0 V ...
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... =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD04N03LA IPU04N03LA Values Unit min. typ. max. - 3909 5199 pF - 1488 1979 - 174 261 - 6 ...
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... 150 200 4 Max. transient thermal impedance Z =f(t thJC parameter µs 10 µs 1 100 µ 0 0.01 0.001 10 100 10 [V] page 4 IPD04N03LA IPU04N03LA ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ...
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... [V] 8 Typ. forward transconductance g =f 120 100 ° [V] page 5 IPD04N03LA IPU04N03LA ); T =25 ° 2 3.4 V 3 [A] D =25 ° [A] D 3 ...
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... Typ. gate threshold voltage V =f(T GS(th) parameter: I 2.5 2 1.5 typ 1 0.5 0 100 140 180 12 Forward characteristics of reverse diode I =f parameter: T 1000 100 [V] page 6 IPD04N03LA IPU04N03LA ); 800 µA 80 µA -60 - 100 T [° °C 175 °C 0.0 0.5 1.0 1.5 V [V] SD 140 180 25 ° ...
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... I GS gate parameter °C 10 100 ° 100 1000 0 16 Gate charge waveforms s(th (th) 100 140 180 page 7 IPD04N03LA IPU04N03LA =25 A pulsed [nC] gate 2004-02- gate ...
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... Package Outline P-TO252-3-11: Outline Footprint: Dimensions in mm Rev. 1.5 Packaging: page 8 IPD04N03LA IPU04N03LA 2004-02-04 ...
Page 9
... Package Outline P-TO251-3-21: Outline Dimensions in inch [mm] Rev. 1.5 page 9 IPD04N03LA IPU04N03LA 2004-02-04 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.5 page 10 IPD04N03LA IPU04N03LA 2004-02-04 ...