IPD04N03LA Infineon Technologies AG, IPD04N03LA Datasheet - Page 2

• Manufacturer Part Number: IPD04N03LA
• Description: OptiMOS 2 Power-Transistor
• Manufacturer: Infineon Technologies AG

Rev. 1.5
2)
3)
4)
5)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Current is limited by bondwire; with an R
See figure 3
T
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j,max
=150 °C and duty cycle D <0.25 for V
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
thJC
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
GS
=1.3 K/W the chip is able to carry 136 A.
<-5 V
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
V
V
SMD version
|V
I
D
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=50 A
=25 °C
=125 °C
DS
page 2
=V
=25 V, V
=25 V, V
=0 V, I
=20 V, V
=4.5 V, I
=4.5 V, I
=10 V, I
=10 V, I
|>2|I
2
cooling area
GS
D
, I
|R
D
2
D
=1 mA
D
D
=80 µA
(one layer, 70 µm thick) copper area for drain
DS(on)max
D
D
GS
GS
DS
=50 A
=50 A,
=50 A
=50 A,
=0 V,
=0 V,
=0 V
5)
,
min.
1.2
25
48
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
1.6
0.1
4.8
4.6
3.4
3.2
1.3
10
10
96
-
-
-
-
IPD04N03LA
IPU04N03LA
max.
100
100
1.3
5.9
5.7
4.0
3.8
75
50
2
1
-
-
-
2004-02-04
Unit
K/W
V
µA
nA
m
S